Growth of TlGaAs by low-temperature molecular-beam epitaxy

Kajikawa, Yasutomo; Kubota, Hirofumi; Asahina, Shuichi; Kanayama, Nobuyuki

doi:10.1016/s0022-0248(01)02361-2

Cited by 24 publications

(13 citation statements)

References 8 publications

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“…2 On the other hand, there have been a great interest to study III-V semiconductors containing thallium aiming to narrow the band gap down to the infrared energy region. [3][4][5][6][7] For example, Yamamoto et al 5 were able to grow the ternary alloys Tl x In 1−x P on top of ͑100͒ InP substrate while Beneyton et al 6 synthesized Tl x Ga 1−x As and Tl x In 1−x As alloys by molecular-beam epitaxy. Additionally, Kajikawa et al 7 reported the growth of Tl x Ga 1−x As alloys also by molecularbeam epitaxy.…”

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confidence: 99%

Novel semiconducting materials for optoelectronic applications: Al1−xTlxN alloys

Dantas

Almeida

Ahuja

et al. 2008

Applied Physics Letters

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We proprose the ternary semiconducting Al 1−x Tl x N alloys as new material for optoelectronic applications. Ab initio calculations have been performed to study structural, electronic, and optical properties of the theoretically designed thallium-aluminum based nitride alloys. We found that the lattice constants vary linearly with thallium composition whereas the band gap and absorption edge span from ultraviolet to infrared energy region by increasing thallium content which make the predicted material interesting for infrared optical devices among other technological applications.

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Novel semiconducting materials for optoelectronic applications: Al1−xTlxN alloys

Dantas

Almeida

Ahuja

et al. 2008

Applied Physics Letters

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“…In scientific and technological areas, the interest on Thallium compounds have been ascending in recent years [5][6][7]. Especially for optical communication systems which are narrowing the band gap [8][9][10] and for heterostructure field effect transistor applications [11], Thallium compounds have been recommended as beneficial applicant. Thallium-V compounds have been indicated as an alternative to HgCdTe [12].…”

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confidence: 99%

Structural and electronic properties of zincblende phase of TlxGa1−x AsyP1−y quaternary alloys: First-principles study

Gülebağlan¹,

Doğan²,

Aycibin³

et al. 2013

Open Physics

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Abstract:Using the first-principles band-structure method, we have calculated the structural and electronic properties of zincblende TlAs, TlP, GaAs and GaP compounds and their new semiconductor Tl Ga 1− As P 1− quaternary alloys. Structural properties of these semiconductors are obtained with the Perdew and Wang local-density approximation. The lattice constants of Tl Ga 1− As, Tl Ga 1− P ternary and Tl Ga 1− As P 1− quaternary alloys were composed by Vegard's law. Our investigation on the effect of the doping (Thallium and Arsenic) on lattice constants and band gap shows a non-linear dependence for Tl Ga 1− As P 1− quaternary alloys. The band gap of Tl Ga 1− As P 1− , E ( ) concerned by the compositions and . To our awareness, there is no theoretical survey on Tl Ga 1− As P 1− quaternary alloys and needs experimental verification. 71.15.Mb, PACS (2008): Keywords:density functional theory • electronic structure of disordered solids • electron density of states and band structure of crystalline solids © Versita sp. z o.o.

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“…Single-crystalline Bi nanowires and Bi-based alloy or multilayer nanowires are expected suitable for thermoelectric applications with high ZT values. Thallium nanowires have high electron mobilities and can be used for IR detectors, laser and field effect transistors [27,28]. Tl doping helps enhancing the ZT value [29].…”

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confidence: 99%