Growth of two-dimensional WS2 thin films by pulsed laser deposition technique

Tian, Kun; Baskaran, Karthikeyan; Tiwari, Ashutosh

doi:10.1016/j.tsf.2018.10.015

Cited by 38 publications

(20 citation statements)

References 50 publications

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“…Possibly, the interior of the multilayered sample was protected from sulfur ablation. Tian et al [53] achieved a 1-cm-scale growth of monolayer WS 2 on sapphire at 500 • C, a temperature even cooler than the one used for their MoS 2 growth efforts. They observed that film quality improved significantly upon annealing in a sulfur rich environment, suggesting that sulfur vacancies are also a challenge for monolayer WS 2 [53].…”

Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

“…Tian et al [53] achieved a 1-cm-scale growth of monolayer WS 2 on sapphire at 500 • C, a temperature even cooler than the one used for their MoS 2 growth efforts. They observed that film quality improved significantly upon annealing in a sulfur rich environment, suggesting that sulfur vacancies are also a challenge for monolayer WS 2 [53]. Rathod et al [54] further explored the consequences of stoichiometry, growing centimeter-scale monolayer films on Si/SiO 2 under various laser fluences.…”

Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

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Large area few-layer TMD film growths and their applications

2020

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Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono-and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.

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Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

Large area few-layer TMD film growths and their applications

2020

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“…However, the domain size of developed WS 2 via aforementioned methods is generally restricted to a few microns (μm), and the production of WS 2 monolayer films with desired domain size remains a distant dream. To achieve this, several strategies (e.g., atomic layer deposition [ 21 ], pulsed-laser deposition [ 22 , 23 ], metal/metal oxide thin films [ 24 ], suitable metal substrates [ 25 ], etc. ), have been suggested to achieve uniform dispersion of precursors over substrates.…”

Section: Introductionmentioning

confidence: 99%

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

et al. 2021

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Growth of monolayer WS2 of domain size beyond few microns is a challenge even today; and it is still restricted to traditional exfoliation techniques, with no control over the dimension. Here, we present the synthesis of mono- to few layer WS2 film of centimeter2 size on graphene-oxide (GO) coated Si/SiO2 substrate using the chemical vapor deposition CVD technique. Although the individual size of WS2 crystallites is found smaller, the joining of grain boundaries due to sp2-bonded carbon nanostructures (~3–6 nm) in GO to reduced graphene-oxide (RGO) transformed film, facilitates the expansion of domain size in continuous fashion resulting in full coverage of the substrate. Another factor, equally important for expanding the domain boundary, is surface roughness of RGO film. This is confirmed by conducting WS2 growth on Si wafer marked with few scratches on polished surface. Interestingly, WS2 growth was observed in and around the rough surface irrespective of whether polished or unpolished. More the roughness is, better the yield in crystalline WS2 flakes. Raman mapping ascertains the uniform mono-to-few layer growth over the entire substrate, and it is reaffirmed by photoluminescence, AFM and HRTEM. This study may open up a new approach for growth of large area WS2 film for device application. We have also demonstrated the potential of the developed film for photodetector application, where the cycling response of the detector is highly repetitive with negligible drift.

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Section: Introductionmentioning

confidence: 99%

“…Thin film materials maintain the fantastic properties of bulk materials [1,2,3,4,5,6] and have the significant advantages of being more economic [7], having small device size [4,5] and having the new physical performance of two-dimensional material [8,9,10]. Thin film materials have been used as functional devices in the applications of semi-conductors [2,8,9,10], metal hydrides [1,4,5,11,12,13], and solar cells [14,15], etc. It is more conducive to the combination of multiple functional materials to form multilayer film materials [16,17], which can not only realize the unique characteristics of each material, but also give play to the characteristics of new interface materials [18,19,20] and improve their comprehensive performance [19,20,21,22,23].…”

Section: Introductionmentioning

confidence: 99%

Effect of Thickness of Molybdenum Nano-Interlayer on Cohesion between Molybdenum/Titanium Multilayer Film and Silicon Substrate

et al. 2019

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Titanium (Ti) film has been used as a hydrogen storage material. The effect of the thickness of a molybdenum (Mo) nano-interlayer on the cohesive strength between a Mo/Ti multilayer film and a single crystal silicon (Si) substrate was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and nano-indenter. Four groups of Si/Mo/Ti multilayer films with different thicknesses of Mo and Ti films were fabricated. The XRD results showed that the introduction of the Mo layer suppressed the chemical reaction between the Ti film and Si substrate. The nano-indenter scratch results demonstrated that the cohesion between the Mo/Ti film and Si substrate decreased significantly with increasing Mo interlayer thickness. The XRD stress analysis indicated that the residual stress in the Si/Mo/Ti film was in-plane tensile stress which might be due to the lattice expansion at a high film growth temperature of 700 °C and the discrepancy of the thermal expansion coefficient between the Ti film and Si substrate. The tensile stress in the Si/Mo/Ti film decreased with increasing Mo interlayer thickness. During the cooling of the Si substrate, a greater decrease in tensile stress occurred for the thicker Mo interlayer sample, which became the driving force for reducing the cohesion between the Mo/Ti film and Si substrate. The results confirmed that the design of the Mo interlayer played an important role in the quality of the Ti film grown on Si substrate.

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Growth of two-dimensional WS2 thin films by pulsed laser deposition technique

Cited by 38 publications

References 50 publications

Large area few-layer TMD film growths and their applications

Large area few-layer TMD film growths and their applications

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

Effect of Thickness of Molybdenum Nano-Interlayer on Cohesion between Molybdenum/Titanium Multilayer Film and Silicon Substrate

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