Growth of ultrathin epitaxial FexCo1−x alloy films on Si(001): stabilization of metastable bcc Co

Wetzel, P.; Bertoncini, Patricia; Berling, Dominique; Mehdaoui, A.; Loegel, B.; Bolmont, D.; Gewinner, G.; Ulhaq‐Bouillet, C.; Pierron‐Bohnes, V.

doi:10.1016/s0039-6028(01)01846-5

Cited by 8 publications

(3 citation statements)

References 25 publications

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“…The idea is to organize the interface phase in order to form a well-defined compound instead of letting the system intermixing naturally. Bertoncini et al [18,19] have used a thin disilicide MSi 2 layer (M = Co, Fe) prior to Fe deposition. This thin disilicide layer, prepared by deposition of some ML of Fe on Si at room temperature followed by annealing at ∼550°C, can act as a diffusion barrier of silicon substrate atom into the Fe overlayer.…”

Section: Resultsmentioning

confidence: 99%

Growth of magnetic tunnel junctions on Si(001) substrates

Mendez¹,

Thanh²,

Ozerov³

et al. 2007

Thin Solid Films

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Section: Resultsmentioning

confidence: 99%

Growth of magnetic tunnel junctions on Si(001) substrates

Mendez¹,

Thanh²,

Ozerov³

et al. 2007

Thin Solid Films

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“…The idea consists of organizing the interface phase in order to form a well-defined compound instead of letting the system intermixing naturally. Bertoncini et al [15,16] have used a thin disilicide MSi 2 layer (M = Co, Fe) prior to Fe deposition. This thin disilicide layer, prepared by deposition of some MLs of Fe on Si at room temperature followed by annealing at $550 8C, can act as a diffusion barrier of silicon substrate atoms into the Fe overlayer.…”

Section: Introductionmentioning

confidence: 99%

Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer

Mendez

Thanh

Ranguis

et al. 2008

Applied Surface Science

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“…Later, bcc Co was stabilized in between Fe layers and Cr layers, 11 in between Au layers, 12 and on some alloy substrates such as TiAl 13 and CoSi 2 /Si(001). 14 In the following section, we will give a short overview of the reports on bcc Co in the literature.…”

Section: Introductionmentioning

confidence: 99%

Growth of epitaxial bcc Co(001) electrodes for magnetoresistive devices

Wieldraaijer

LeClair

et al. 2003

Phys. Rev. B

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The applicability of the strain-induced bcc phase of Co in magnetoresistive devices was studied. Ultrathin bcc Co͑001͒ films and the influence of the additional layers needed for magnetoresistive devices were examined by means of 59 Co nuclear magnetic resonance ͑NMR͒. NMR is shown to be a discriminating technique for determining the presence of structurally and magnetically pure bcc Co. The maximum stability for uncovered and Fe-covered layers grown on Fe͑001͒/GaAs͑001͒ and Fe͑001͒/Ge͑001͒ seed layers is found to be about 2 nm. Growth of an Al 2 O 3 top layer preserves the bcc phase, in contrast to a Cu film which causes a transformation of the bcc structure to the fcc or the hcp phase. The bcc-preserving effects of Al 2 O 3 imply the possibility to fabricate magnetic tunnel junctions with bcc Co͑001͒ bottom electrodes. Although bcc Co is a force-induced structure, thin layers are shown to be stable over a few years when Al 2 O 3 has been grown on top. Junction structures using bcc Co͑001͒ bottom electrodes were grown and characterized.

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Growth of ultrathin epitaxial FexCo1−x alloy films on Si(001): stabilization of metastable bcc Co

Cited by 8 publications

References 25 publications

Growth of magnetic tunnel junctions on Si(001) substrates

Growth of magnetic tunnel junctions on Si(001) substrates

Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer

Growth of epitaxial bcc Co(001) electrodes for magnetoresistive devices

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