1985
DOI: 10.1016/0022-0248(85)90209-x
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Growth of urea crystals by physical vapor transport

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Cited by 27 publications
(17 citation statements)
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“…Using the results presented in Table 3, the aspect ratio (AS ¼R 001 /R 110 ) is found to be 1.54 and 1.60 for HF and DFT-B3LYP methods, respectively. We note here that our results for the aspect ratio are in excellent agreement with the corresponding experimental value of 1.5 [16,31]. The quantitative agreement between experimental and calculated shapes of urea crystal, where energetics has been obtained using 50% BSSE correction, is presented in Table 4.…”
Section: Resultssupporting
confidence: 83%
See 1 more Smart Citation
“…Using the results presented in Table 3, the aspect ratio (AS ¼R 001 /R 110 ) is found to be 1.54 and 1.60 for HF and DFT-B3LYP methods, respectively. We note here that our results for the aspect ratio are in excellent agreement with the corresponding experimental value of 1.5 [16,31]. The quantitative agreement between experimental and calculated shapes of urea crystal, where energetics has been obtained using 50% BSSE correction, is presented in Table 4.…”
Section: Resultssupporting
confidence: 83%
“…8(a) and (d) for un-relaxed and relaxed structures from HF and DFT-B3LYP methods, respectively. The relaxed growth morphologies obtained using HF and DFT methods are in excellent agreement with the experimental morphology of urea crystal obtained from vapour phase [16,31]. Both calculated and experimentally observed shapes of urea crystal show the appearance of (110), (001) and (111) faces.…”
Section: Resultssupporting
confidence: 76%
“…SOPVT techniques, which have previously been reported and discussed by many authors (e.g., Lauck et al (1986), (a)(b); ROSEMBERGER; SCHÖNHERR), proved suitable also for growing organic crystals [FEIGELSON et al;PIECHOTKA and KALDIS (1984), and others].…”
Section: General Featuresmentioning
confidence: 88%
“…It was further noted that the predeposited NCs were aligned during dip coating, which resulted in parallel nanoribbons. OFETs fabricated with patterned CuPc [351] and F 16 CuPc [348] ribbons showed mobilities of 0.1 to 0.5 and 0.2 cm 2 /Vs, respectively, performing much better than those devices fabricated by the manual process of crystal placement described earlier [351].…”
Section: Patterned Deposition Os Crystalsmentioning
confidence: 99%
“…To remove such contaminants, a semiclosed system was thus advanced in which one end of the furnace tube was completely sealed and the other end was connected to a HV pump to continuously pump out the volatile impurities. For instance, urea crystals were successfully prepared in a semiclosed PVT system [348].…”
Section: Vapor-grown Os Crystalsmentioning
confidence: 99%