Growth of Vertically Aligned InGaN Nanowires

Abstract

One-dimensional (1D) semiconducting materials have attracted considerable attention for future device applications, such as nanophotonic and nano electronic devices [1]. Group III-nitride nanowires (NWs), InGaN NW is of tunable bandgap (0.7-3.4 eV), high carrier mobility, and excellent optical absorption, which have demonstrated great potentials for the high-performance photodetectors, light-emitting diodes, and solar cells. The optoelectronic performance of InGaN NW devices is highly associated with the NW morphologies [2]. For instance, poorly defined morphology such as a conical shape may cause a significant Fermi level fluctuation along the NW axial direction, leading to undesirable properties of the NWs as well as the poor performance of the related devices. Therefore, the high quality and vertically aligned InGaN NWs is one of the key points for the device applications of the InGaN NWs. The InGaN NW growth methods are reviewed briefly in the subsequent sections.Recently numerous achievements for well-aligned and uniform InGaN NWs have been obtained through catalyst-assisted "vaporliquid-solid" (VLS) growth, self-catalytic VLS growth and selective area growth (SAG) techniques.