2009
DOI: 10.1016/j.apsusc.2008.12.005
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Growth of Y-junction bamboo-shaped CNx nanotubes on GaAs substrate using single feedstock

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Cited by 18 publications
(13 citation statements)
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“…NCNTs prepared via pyrolysis of ferrocene/melamine precursor, BN-codoped CNTs prepared from CVD grown CNTs using postsynthetic modification with B and N 4 μA(MWNCNTs) and 2 μA (MWBNCNTs) turn-on fields of 2-3 V/μm 3 mA/cm 2 (MWBNCNTs) and 5.5 mA/cm 2 (MWNCNTS) at 5.5 V/μm [739] Nitrogen-doped Y-junction bamboo-shaped CNTs CVD of monoethanolamine/ferrocene mixture on GaAs substrate at 950 °C turn-on field 1.6 V/μm threshold field 2.63 V/μm [165] DWNCNTs (1.5 N at.%) In situ N-doping of the DWCNTs using a catalytic reaction of NH 3 and CH 4 over an Fe-Mo catalyst.…”
Section: Nomentioning
confidence: 99%
See 1 more Smart Citation
“…NCNTs prepared via pyrolysis of ferrocene/melamine precursor, BN-codoped CNTs prepared from CVD grown CNTs using postsynthetic modification with B and N 4 μA(MWNCNTs) and 2 μA (MWBNCNTs) turn-on fields of 2-3 V/μm 3 mA/cm 2 (MWBNCNTs) and 5.5 mA/cm 2 (MWNCNTS) at 5.5 V/μm [739] Nitrogen-doped Y-junction bamboo-shaped CNTs CVD of monoethanolamine/ferrocene mixture on GaAs substrate at 950 °C turn-on field 1.6 V/μm threshold field 2.63 V/μm [165] DWNCNTs (1.5 N at.%) In situ N-doping of the DWCNTs using a catalytic reaction of NH 3 and CH 4 over an Fe-Mo catalyst.…”
Section: Nomentioning
confidence: 99%
“…Besides the extensive use of already mentioned CH 3 CN and various alkylamines, arylalkylamines, and arylamines as NCNTs precursors, NCNTs were successfully prepared by pyrolysis of functional amines, e.g., monoethanolamine [164][165][166], and amides, e.g., carbamide (urea) [167], N,N-dimethylformamide [49,50,105,168,169], and dicyandiamide [170], or mixtures containing amides, e.g., N,N-dimethylformamide/camphor [168], N,Ndimethylformamide/cyclodextrin [169], and (N-phenylcarbamoyl)ferrocene/toluene [171].…”
Section: Arc-discharge and Laser Ablationmentioning
confidence: 99%
“…There are several methods to bring in contact the SWCNT absorber and GaAs (n-type substrate): chemical vapour deposition [10], followed by electron-beam lithography with assistance of a third material, that is, Si 3 N 4 or SiO 2 [4].…”
Section: Device Modelmentioning
confidence: 99%
“…There is no agreement on the value of current density to be specified and the definition of turn-on and threshold field, it is determined by the group research themselves. For example, Ghosh et al [4,5] and Srivastava et al [6] defined turn-on and threshold field to be the field required by the film to produce current density of 10 µAcm -2 and 1 mAcm -2 respectively. While Bonard and co-worker [90] specified the current density of 10 µAcm -2 and 10 mAcm -2 respectively.…”
Section: Introductionmentioning
confidence: 99%