Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers

Guo, Jingwei; Huang, Hui; Ding, Yizheng; Ji, Zhuoyu; Liu, Ming; Ren, Xiaomin; Zhang, Xia; Huang, Yongqing

doi:10.1016/j.jcrysgro.2012.07.047

Cited by 16 publications

(12 citation statements)

References 34 publications

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“…An irregular variation of the Al content inside the AlGaAs shell has been observed in single shell and multi-shell GaAs/AlGaAs NWs [7,8,9,18,19]. In particular, (111) cross-sections of NWs revealed Al-rich bands parallel to the <112> diagonal directions and increased Al concentration from the core to the outer surface [8,9,10,18].…”

Section: Introductionmentioning

confidence: 98%

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

Kehagias¹,

Florini²,

Kioseoglou³

et al. 2015

Semicond. Sci. Technol.

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GaAs/AlGaAs core-shell nanowires were grown on Si(111) by Ga-assisted molecular beam epitaxy via the vapor-liquid-solid mechanism. High-resolution and scanning transmission electron microscopy observations showed that nanowires were predominantly zinc-blende single crystals of hexagonal shape, grown along the [111] direction. GaAs core nanowires emerged from the Si surface and subsequently, the nanowire growth front advanced by a continuous sequence of (111) rotational twins, while the AlGaAs shell lattice was perfectly aligned with the core lattice. Occasionally, single or multiple stacking faults induced wurtzite structure nanowire pockets. The AlGaAs shell occupied at least half of the nanowire's projected diameter, while the average Al content of the shell, estimated by energy dispersive X-ray analysis, was x = 0.35. Furthermore, molecular dynamics simulations of hexagonal cross-section nanowire slices, under a new parametrization of the Tersoff interatomic potential for AlAs, showed increased atom relaxation at the hexagon vertices of the shell. This, in conjunction with the compressively strained Al 0.35 Ga 0.65 As shell close to the GaAs core, can trigger a kinetic surface mechanism that could drive Al adatoms to accumulate at the relaxed sites of the shell, namely along the diagonals of the shell's hexagon. Moreover, the absence of long-range stresses in the GaAs/Al 0.35 Ga 0.65 As coreshell system may account for a highly stable heterostructure. The latter was consolidated by temperaturedependent photoluminescence spectroscopy.

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Section: Introductionmentioning

confidence: 98%

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

Kehagias¹,

Florini²,

Kioseoglou³

et al. 2015

Semicond. Sci. Technol.

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“…[96] The Al-rich shell has been reported by a few reports on AlGaAs NWs and is attributed to the low diffusion length of Al, which tends to incorporate at the external facets of the NW, forming a shell-like feature. [96,[105][106] Spontaneous shell growth is not uncommon in ternary NWs and will be mentioned again for other ternary alloys. The presence of the shell is revealed in cross-sectional EDX measurements, as Al peaks and corresponding Ga dips at the outer parts of the NW (Fig.…”

Section: 21) Algaas Nanowiresmentioning

confidence: 86%

“…[103][104] Literature on Si substrates may be less but has some significant observations as well which will be shown in the next paragraph. The growth of AlGaAs NWs has been achieved via MBE [96,105] and MOCVD [106] following the VLS growth mode. In all of the up-to-date reports, the procedure was Au-assisted.…”

Section: 21) Algaas Nanowiresmentioning

confidence: 99%

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Boras

Liu

2019

J. Semicond.

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Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group III-V semiconductors are of particular interest and have been widely investigated due to their excellent optical properties and high carrier mobility. However, the integration of III-V structures as light sources and numerous other optical components on Si, which is the foundation for most optoelectronic and electronic integrated circuits, has been hindered by the large lattice mismatch between these compounds. This mismatch results in substantial amounts of strain and degradation of the performance of the devices. Nanowires (NWs) are unique nanostructures that induce elastic strain relaxation, allowing for the monolithic integration of III-V semiconductors on the cheap and mature Si platform. A technique that ensures flexibility and freedom in the design of NW structures is the growth of ternary III-V NWs, which offer a tuneable frame of optical characteristics, merely by adjusting their nominal composition. In this review, we will focus on the recent progress in the growth of ternary III-V NWs on Si substrates. After analysing the growth mechanisms that are being employed and describing the effect of strain in the NW growth, we will thoroughly inspect the available literature and present the growth methods, characterization and optical measurements of each of the III-V ternary alloys that have been demonstrated. The different properties and special treatments required for each of these material platforms are also discussed. Moreover, we will present the results from the works on device fabrication, including lasers, solar cells, water splitting devices, photodetectors and FETs, where ternary III-V NWs were used as building blocks. Through the current paper, we exhibit the up-to-date state in this field of research and summarize the important accomplishments of the past few years.

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“…В настоящее время наблюдается большой интерес к исследованию процессов формирования и физических свойств A III B V полупроводниковых нитевидных нанокристаллов (ННК) [1][2][3][4][5][6]. Одним из преимуществ III−V полупроводниковых ННК является возможность эпитаксиального выращивания аксиальных (осевых) гетероструктур внутри них из материалов, сильно рассогласованных по параметру решетки.…”

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“…Одним из преимуществ III−V полупроводниковых ННК является возможность эпитаксиального выращивания аксиальных (осевых) гетероструктур внутри них из материалов, сильно рассогласованных по параметру решетки. Поэтому имеется большой интерес к формированию и исследованию свойств гетероструктур различного типа (осевых, радиальных и комбинированных) внутри ННК, основанных на чередовании как элементов группы III (InGaAs/GaAs, GaAs/AlGaAs) [3, 5,7,8], так и группы V (InAsP/InP, GaAs/GaP) [7][8][9]. Важнейшими задачами при этом являются сохранение направления роста ННК и получение резких гетерограниц [2][3][4][5][7][8][10][11][12][13][14].…”

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Новый Метод Формирования Гетеропереходов В a-=sup=-Iii-=/Sup=-B-=sup=-v-=/Sup=- Нитевидных Нанокристаллах

Сибирев¹,

Корякин²,

Дубровский³

2016

Физика И Техника Полупроводников

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Рассматривается процесс образования осевых гетероструктур в нитевидных нанокристаллах на основе модели роста по механизму пар−жидкость−кристалл. Предложен новый способ формирования гетеропереходов в (Аl,Ga)As нитевидных нанокристаллах, с помощью изменения потока мышьяка.

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Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers

Cited by 16 publications

References 34 publications

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Новый Метод Формирования Гетеропереходов В a-=sup=-Iii-=/Sup=-B-=sup=-v-=/Sup=- Нитевидных Нанокристаллах

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