Рассматривается процесс образования осевых гетероструктур в нитевидных нанокристаллах на основе модели роста по механизму пар−жидкость−кристалл. Предложен новый способ формирования гетеропереходов в (Аl,Ga)As нитевидных нанокристаллах, с помощью изменения потока мышьяка.

The influence of elastic stresses on the formation of axial heterojunctions in ternary III-V nanowires was theoretically investigated. The composition profiles of InAs/GaAs axial heterojunction in self-catalyzed GaxIn1-xAs nanowires were obtained. It was shown that the InAs/GaAs heterojunction width amounts to tens of monolayers and increases with the increase of the nanowire radius due to elastic stresses. The elastic stress relaxation on nanowire sidewalls does not lead to the presence of miscibility gap in GaxIn1-xAs system at typical growth temperature (about 450ºC) and nanowire radius above 5 nm.