Growth of ZnO crystal by self-flux method using Zn solvent

Hong, Sang Hwui; Sato, Takashi; Mikami, Masaki; Uchikoshi, Masahito; Mimura, Kouji; Masa, Y.; Isshiki, Minoru

doi:10.1016/j.jcrysgro.2009.04.006

Cited by 9 publications

(3 citation statements)

References 15 publications

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“…About 2.5 g of ZnO polycrystalline (purified polycrystals by the ordinary CVT method [9]) and 0.1 g 5 N purity graphite rod (Sigma Aldrich Fine Chemical Co., Ltd.) were loaded into an inner quartz ampoule. ZnO seed crystal (grown by the self-flux method [15]) of about 1.5 Â 1.5 Â 0.5 mm 3 is put on the bottom of the outer tube. The ampoule was evacuated at 150 1C for 3 h, and then sealed under vacuum higher than 7 Â 10 À3 Torr.…”

Section: Growth Procedures and Characterizationmentioning

confidence: 99%

Growth of high-quality ZnO single crystals by seeded CVT using the newly designed ampoule

Hong¹,

Mikami²,

Mimura³

et al. 2009

Journal of Crystal Growth

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Section: Growth Procedures and Characterizationmentioning

confidence: 99%

Growth of high-quality ZnO single crystals by seeded CVT using the newly designed ampoule

Hong¹,

Mikami²,

Mimura³

et al. 2009

Journal of Crystal Growth

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“…for electronic devices difficult. An interesting variant allows using a self-flux of molten zinc to grow ZnO crystals [23]. Only small crystals could be obtained, but the purity was reported to be higher compared with commercial hydrothermal material.…”

Section: From Solutions Including Hydrothermalmentioning

confidence: 99%

Growth Techniques for Bulk ZnO and Related Compounds

et al. 2012

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ZnO bulk crystals can be grown by several methods. 1) From the gas phase, usually by chemical vapor transport. Such CVT crystals may have high chemical purity, as the growth is performed without contact to foreign material. The crystallographic quality is often very high (free growth). 2) From melt fluxes such as alkaline hydroxides or other oxides (MoO3, V2O5, P2O5, PbO) and salts (PbCl2, PbF2). Melt fluxes offer the possibility to grow bulk ZnO under mild conditions (<1000 deg. C, atmospheric pressure), but the crystals always contain traces of solvent. The limited purity is a severe drawback, especially for electronic applications. 3) From hydrothermal fluxes, usually alkaline (KOH, LiOH) aqueous solutions beyond the critical point. Due to the amphoteric character of ZnO, the supercritical bases can dissolve it up to several per cent of mass. The technical requirements for this growth technology are generally hard, but this did not hinder its development as the basic technique for the growth of {\alpha}-quartz, and meanwhile also of zinc oxide, during the last decades. 4) From pure melts, which is the preferred technology for numerous substances applied whenever possible, e.g. for the growth of silicon, gallium arsenide, sapphire, YAG. The benefits of melt growth are (i) the high growth rate and (ii) the absence of solvent related impurities. In the case of ZnO, however, it is difficult to find container materials that are compatible from the thermal (fusion point Tf = 1975 deg. C) and chemical (required oxygen partial pressure) point of view. Either cold crucible (skull melting) or Bridgman (with reactive atmosphere) techniques were shown to overcome the problems that are inherent to melt growth. Reactive atmospheres allow to grow not only bulk ZnO single crystals, but also other TCOs such as {\beta}-Ga2O3 and In2O3.Comment: 10 pages, 7 figures, talk on MRS Fall 2011 Bosto

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“…To date, bulk ZnO single crystals have been grown via a hydrothermal (HT) method [ 4 – 6 ], pressurized melt method [ 7 , 8 ], flux method [ 9 – 11 ], and chemical vapor transport (CVT) method [ 9 , 10 , 12 , 13 ]. Among them, CVT method is suitable for high-purity ZnO crystals grown at the relatively low temperature.…”

Section: Introductionmentioning

confidence: 99%

Surface Morphology Study of Chemical Vapor Transport of ZnO Crystals

Fan

Yan

et al. 2018

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A chemical vapor transport (CVT) method was implemented to grow bulk ZnO crystals. X-ray diffraction (XRD), field emission scanning electron microscopy (SEM), and optical microscope (OM) studies were carried out to characterize the surface properties of the grown crystal. The XRD result indicated the exposed solid-vapor interface of the as-grown crystal was composed of (0001) and false{10true1-1false} faces. Using SEM and OM, we observed small hexagonal pyramids and microstructures formed of crosslines on the as-grown crystal and found hexagonal thermal etching pits on the surfaces of seed crystals. The formation, evolution, and distribution mechanisms of the microstructures were investigated.

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Growth of ZnO crystal by self-flux method using Zn solvent

Cited by 9 publications

References 15 publications

Growth of high-quality ZnO single crystals by seeded CVT using the newly designed ampoule

Growth of high-quality ZnO single crystals by seeded CVT using the newly designed ampoule

Growth Techniques for Bulk ZnO and Related Compounds

Surface Morphology Study of Chemical Vapor Transport of ZnO Crystals

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