Growth of γ-In<sub>2</sub>Se<sub>3</sub>Thin Films by Electrostatic Spray Pyrolysis Deposition

Kato, Takamasa; Hiramatsu, Toshitaka; Onojima, Norio

doi:10.7567/jjap.50.05fb11

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…Various methods have been applied for the fabrication of indium selenide thin films, such as thermal evaporation, flash evaporation, molecular beam deposition (MBE), metal‐organic chemical vapor deposition (MOCVD), chemical vapor transport, and electrostatic spray pyrolysis deposition . Among them, thermal and flash evaporations have been widely used for the fabrication of indium selenide thin films.…”

Section: Synthetic Methods Of Indium Selenidesmentioning

confidence: 99%

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

Han

Chen

Drennan

et al. 2014

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Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this Review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices.

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Section: Synthetic Methods Of Indium Selenidesmentioning

confidence: 99%

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

Han

Chen

Drennan

et al. 2014

Small

315

224

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Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films

Sreekumar

Sajeesh

Abe

et al. 2012

Physica Status Solidi (b)

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The present work reports the influence of indium concentration and annealing temperature (100–400 °C) on the structural and optoelectronic properties of indium selenide thin films grown using a stack elemental layer technique. The concentration of indium in indium selenide thin films is varied by adjusting the thickness of the indium layer to 28, 42 or 56 nm while keeping the selenium layer thickness constant at 200 nm. Depending on the indium layer thickness of 42 or 56 nm, indium selenide thin films exhibited a phase transition either from a mixed phase (InSe, γ‐In2Se3 and β‐In2Se3) and/or from a complete amorphous phase to a single phase γ‐In2Se3 at annealing temperature 400 or 300 °C, respectively, with a preferential grain orientation along the c‐axis. Depth‐wise X‐ray photoelectron spectroscopy (XPS) analysis conducted on these samples (thickness of Se = 200 nm, In = 56 nm) showed evidence of a phase transition from amorphous to crystalline γ‐In2Se3 phase and formation of uniform stoichiometric (In/Se = 40:60) indium selenide. On the other hand, indium selenide grown using an indium thickness of 28 nm did not exhibit any phase transition. While using X‐ray diffraction (XRD) studies to analyse the structural properties, we made use of optical absorption and Raman spectroscopy in order to determine the optical energy gap and find the presence of parasitic β‐In2Se3 phase, respectively. The growth along the c‐axis either gives rise to carrier diffusion along the c‐axis or causes the appearance of a higher photosensitivity (62–72) due to the absence of dangling bonds which trap photogenerated carriers. The properties exhibited by the c‐axis‐grown γ‐In2Se3 suggest the potentiality of this material as a window layer in solar cell application.

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Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting

Waghmare

Sharma

Shinde

et al. 2021

J Solid State Electrochem

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Growth of γ-In₂Se₃Thin Films by Electrostatic Spray Pyrolysis Deposition

Cited by 4 publications

References 13 publications

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films

Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting

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Growth of γ-In2Se3Thin Films by Electrostatic Spray Pyrolysis Deposition

Cited by 4 publications

References 13 publications

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films

Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting

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Growth of γ-In₂Se₃Thin Films by Electrostatic Spray Pyrolysis Deposition