Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires

Abstract

Several different growth directions of SiC nanowires (NWs) determined by the substrate surface crystallographic orientation were achieved by conducting vapor–liquid–solid growth on the top surfaces and the sidewalls of the 4H-SiC mesas. When substrate-dependent (i.e., epitaxial) growth was ensured, six possible crystallographic orientations of 3C-SiC NW axis with respect to the 4H-SiC substrate were realized. They all were at 20° with respect to the substrate c plane, and their projections on the c plane corresponded to one of the six equivalent ⟨101̅0⟩ crystallographic directions. All six orientations were obtained simultaneously when growing on the (0001) top surface of the 4H-SiC wafer or on the mesa tops. In contrast, no more than two NW orientations coexisted when grown on any particular crystallographic plane of a mesa sidewall. In particular, the {101̅0} mesa sidewall plane resulted in only one NW orientation, thereby producing well-aligned NW arrays desirable for device applications.

SiC nanowire vapor–liquid–solid growth using vapor-phase catalyst delivery

“…Investigation of the polytype and the crystalline structure of these NWs is beyond the scope of this paper and is reported elsewhere. 24 A similar result has been achieved when a small seed sample coated with a metal catalyst layer was placed upstream from the growth substrate. NWs of varying density were observed across the surface of the growth substrate even when the substrate was positioned at a significant distance (e.g., more than 10 mm) away from the catalyst source.…”

“…Investigation of the growth orientation trends and the polytype and the crystalline structure of these NWs is beyond the scope of this paper and will be reported elsewhere. 24 It is the subject of the future work to establish what exactly gas-phase species and chemical reactions are involved in vaporization of the metal catalysts and its transport to the growth surface. A relevant observation from Fig.…”

In situ synthesis of SiC nanowire porous layer on carbon/carbon composites

“…[39][40][41][42][43][44][45] The former generally involves catalyst while the latter one does not. [39][40][41][42][43][44][45] The former generally involves catalyst while the latter one does not.…”

“…According to the previous research, the growth process of SiCNWs can be dominated by the vapor-liquid-solid (VLS) mechanism and the vapor-solid (VS) mechanism. [39][40][41][42][43][44][45] The former generally involves catalyst while the latter one does not. The growth mechanism of the as-synthesized SiCNWs is controlled by the VS mechanism due to the absence of catalyst.…”

Preparation and characterization of SiC@CNT coaxial nanocables using CNTs as a template

“…1,2 These excellent properties make SiC a good candidate for electronic and photonic devices designed for high-temperature, high-power, and high-frequency applications. 3,4 Many research efforts have been devoted to the design and synthesis of SiC-related one-dimensional (1D) nanostructures. [5][6][7] As a unique kind of one-dimensional (1D) nanoarchitecture, nanocables are a coaxial core-shell heterostructure that can offer the possibility to enhance functionality and multifunctional properties compared with those of their limited single-component counterparts.…”