Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

Low-Angle-Incidence Microchannel Epitaxy of $a$-Plane GaN Grown by Ammonia-Based Metal–Organic Molecular Beam Epitaxy

“…20g GaN sidewalls appeared frequently, and consequently, a large amount of Ga adatoms migrated from f11 20g GaN sidewalls onto the ð0001Þ GaN top surface and worsened the width to the highest point ratio of the lateral overgrowth. 12) This result also suggests that the use of an a-plane GaN template is beneficial for the formation of a flat top surface, and therefore, a wide lateral overgrowth. The is because the f11 20g GaN face is easily formed on the top of the layer under this growth condition.…”

“…9) We have recently published a series of articles with respect to achieving c-plane GaN LAIMCE using NH 3based metal-organic MBE (MOMBE). [10][11][12] The optimized width of the lateral overgrowth (W MCE ) was 6.9 m, which had no pits after etching with H 3 PO 4 solution. However, the highest point of the films (H) was as thick as 3 m, and the lateral growth rate was as low as 230 nm/h.…”

“…Furthermore, a lateral growth rate of 616 nm/h was achieved, which is 2.67 times faster than the previous result. 12) Finally, the distribution of TDs in the LAIMCE GaN was investigated using cross-sectional TEM, as shown in Fig. 4.…”