Growth process and structure of Fe/Si(1 1 1) ultrathin film: Transition from single-domain Fe(1 1 1)/Si(1 1 1) to β-FeSi2

Tsushima, Ryo; Michishita, Y.; Fujii, Shunjiro; Okado, H.; Umezawa, Koji; Maeda, Yoshihito; Terai, Yoshikazu; Oura, Kenjiro; Katayama, Mitsuhiro

doi:10.1016/j.susc.2005.01.051

Cited by 10 publications

(9 citation statements)

References 23 publications

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“…These rods and the modulations are consistent with β-FeSi 2 on the Si(111) surface. The epitaxial orientation in the present work agrees with previous studies [2,[7][8][9][10][11][12]. The rod pattern indicate the flatness of the β-FeSi 2 (110) or β-FeSi 2 (101) film.…”

Section: Resultssupporting

confidence: 91%

“…Since Fe is the most common ferromagnetic element, it is crucial to understand how Fe interacts with Si, and how Fe grows on a Si substrate. It is known that when Fe is deposited on a Si substrate, several types of Fe silicides, such as α-FeSi 2 , β-FeSi 2 , γ-FeSi 2 , c-FeSi and -FeSi are formed on the substrate after thermal reactions [1][2][3][4][5][6][7][8][9][10][11][12]. Although most of these silicides are non-magnetic, they are important from another point-of-view.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, β-FeSi 2 is a semiconductor with a low environmental load, whose band gap is suitable for optical communication devices. However, most previous studies are contradictory in terms of the growth conditions or the resulting silicide species on Si [1][2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…In order to exactly determine the silicide species, one needs to investigate the reciprocal space in three dimensions. In addition to silicides with cubic unit cells, it is also known that β-FeSi 2 (orthogonal unit cell) grows with the epitaxial orientation of (110) [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Fe Silicide Growth on Si(111) Surface by Weissenberg RHEED

Abukawa

Fujisaki

Takahashi

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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Fe silicide growth on a Si(111) surface has been characterized by Weissenberg RHEED. The silicides were grown in the present study via two fundamental methods, reactive deposition epitaxy (RDE) and solid phase epitaxy (SPE), with various deposition amounts of Fe. The silicide species and its epitaxial orientation were determined from three-dimensional diffraction patterns obtained using Weissenberg RHEED. It was found that only α-FeSi2 islands grew by the RDE method. Both α-FeSi2 and β-FeSi2 islands grew by the SPE method. The proportion of β-FeSi2 increased with increasing Fe deposition amount, until only β-FeSi2 was finally observed. The present results could be explained by the surface or interface reaction model wherein the reaction at the Si surface and at the Fe/Si solid interface caused α-FeSi2 and β-FeSi2 growth, respectively.

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Characterization of Fe Silicide Growth on Si(111) Surface by Weissenberg RHEED

Abukawa

Fujisaki

Takahashi

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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show abstract

“…[9,10,13,20,[24][25][26][27]. Our latest study on obliquely deposited Fe/ Al 2 O 3 (0001) shows that the oblique deposition only slightly randomizes the crystalline ordering, while the crystallographic orientation is invariant [1].…”

Section: Resultsmentioning

confidence: 99%