Growth rate anisotropy and kinetic coefficients of vicinal faces at LPE garnet films. II. Kinetic coefficients

Görnert, P.; Hergt, R.

doi:10.1002/pssa.2210470111

Cited by 19 publications

(3 citation statements)

References 19 publications

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“…I n contrast to [GI, (2) is consistent with the boundary conditions h = -1 and h = 1, corresponding to 6 = -n/2 and 6 = -a12 + go", respectively. Taking h = h ( x ) from 1151 we obtain the function of the step contour as y(z) = tan 6 ( d ) dz'…”

Section: Equilibrium Shape Of Garnet Stepssupporting

confidence: 64%

Investigation of growth steps due to misorientation of garnet LPE films

Hergt¹,

Pfeiffer²

1981

Phys. Stat. Sol. (a)

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Garnet LPE films deposited on slightly spherically shaped substrate surfaces of nearly singular orientation are investigated with respect to misorientation steps. Such steps are detected by a decoration technique using PbO nuclei. At the singular pole of the films closed steps are found which are interpreted as growing by a “nuclei above nuclei” mechanism. The typical shape of these steps is analysed by an improved theoretical model. There the problem of shape preservation is taken into consideration. From the investigations a value of 6.5 results for the Jackson factor. Typical step splitting effects at misorientation steps are found using PbO as well as Au decoration techniques. The effects are discussed in relation to the Jackson factor. For the kink site binding energy a value of 92 kJ/mol is estimated.

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Section: Equilibrium Shape Of Garnet Stepssupporting

confidence: 64%

Investigation of growth steps due to misorientation of garnet LPE films

Hergt¹,

Pfeiffer²

1981

Phys. Stat. Sol. (a)

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“…A similar dependence has to be assumed for the surface free energy a t small deviations from a singular direction. However, with increasing deviation from the singular direction the actual rate deviates from the value given by (1) due to the increasing importance of the volume diffusion [7]. The volume diffusion part in the rate can be eliminated if one takes the transport equation in the simple form v = vstep sin 8 .…”

Section: Resultsmentioning

confidence: 99%

“…Contrary it was shown that in the vicinity of (110) the rate is kinetically. controlled [7]. I n this case the rate is given by the displacement velocity of the steps v,tep and the vicinal angle 8 according to From the example given in Pig.…”

Section: Resultsmentioning

confidence: 99%

Experimental determination of the growth rate anisotropy of garnets

Hergt¹,

Görnert²

1980

Phys. Stat. Sol. (a)

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The orientational dependence of the growth rate of a typical bubble garnet system is measured in the whole solid angle range of 4x for the case of low undercooling. There are found deep singular minima a t (110) and (211) and shallow nonsingular minima a t (321) and (100). The maximum rate is attained near (111). Conclusions are drawn t o the equilibrium form of garnets and the results are djscussed in terms of thermal roughening of the garnet F-faces. The sequence of the faces in the order of decreasing roughening temperature is {llO}, {211). {321}, {loo}. The displacement velocity of misorientation steps on {211) faces is found to be 0.18 p n / s for 18 K undercooling. Die Orientierungsabhangigkeit der Wachstumsrate eines typischen ,,bubble"-Granat-Systems wird im gesamten Raumwinkelbereich von 4ic fur den Fall geringer Unterkuhlimg gernessen. Es werden fur (110) und (21 1) tiefe singulare Minima und fur (321) und (100) flache nichtsingulare Minima gefunden. Die maximale Rate wird in der Nahe von (111) erreicht. Es werden Schlusse auf die Gleichgewichtsform der Granate gezogen und die Ergebnisse im Rahmen der thermischen Aufrauhung von F-Flachen diskutiert. Die Reihenfolge der Flachen mit abnehmender Aufrauhungstemperatiir ist { 1 lo}, {211), {321}, {IOO}. Die Verschiebnngsgeschwindigkeit von Wachstumsstufen auf {211}-Flachen wird zu 0,18 pm/s bei 18 I< Unterkuhlung bestimmt.

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Growth mechanism of garnet single crystals in high temperature solutions revealed by the induced striation technique

Görnert

1980

Cryst Res and Technol

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List of symbols 42 628 P. GORNERT (iii) The flux reaction technique. (iv) The solvent evaporation technique.The importance of these methods decreases from (i) to (iv). All methods have the advantage that growth of the crystallizing compound occurs a t temperatures from about 600 to 1300 "C which are lower than the corresponding melting temperatures.HTS growth therefore is the connecting link between hydrothermal and melt growth. The method is preferably used for the preparation of incongruently melting materials, materials which undergo a phase transition, high refractory ones and materials with very volatile constituents.An important disadvantage is the incorporation of solvent ions in the crystal. The largest progress regarding crystal size and quality has been reached by a carefully controlled growth technology of garnets especially Y,Pe,O,, (YIG) in PbO-PbF,-B,O, solvents as developed by TOLKSDORF (reviews : TOLKSDORF 1977 a) from Philips Hamburg. This material is industrially produced for applications in the microwave technique as tunable filters, oscillators, circulators, isolators, delay lines and power limiters.Problems of HTS growth are comprehensively treated in books published in 1975 by ELWELL and SCHEEL and in 1978 by TIMOFEEVA or in book articles by WANK- LYN and ELWELL (1974), BRICE (1973BRICE ( , 1977, GIESS and GHEZ (1975). The aim of this paper is to review some recent (including 1978) results regarding physicochemical processes in HTS, which have not been discussed in a collected form up to now. A large part of these investigations bases on the application of induced st,riations in garnet single crystals, which were grown by the slow cooling method. Although the topic of the paper deals above all with single crystal growth, results achieved by liquid phase epitaxy (LPE) are needed to understand the growth mechanism more in detail.

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Growth rate anisotropy and kinetic coefficients of vicinal faces at LPE garnet films. II. Kinetic coefficients

Cited by 19 publications

References 19 publications

Investigation of growth steps due to misorientation of garnet LPE films

Investigation of growth steps due to misorientation of garnet LPE films

Experimental determination of the growth rate anisotropy of garnets

Growth mechanism of garnet single crystals in high temperature solutions revealed by the induced striation technique

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