Growth striations and dislocations in highly doped semiconductor single crystals

X-ray study of dopant state in highly doped semiconductor single crystals

“…It probably characterizes smooth variations in the concentration and thermal fields in the vicinity of crystallization front because of the turbulent character of flows in the melt. The specific features of digital processing of growth striation images were considered in more detail in [23][24][25].…”

Structural Characterization of Doped GaSb Single Crystals by X-ray Topography

“…This occurs because the method encompasses a substantial non-stationary growth process due to intense convective flows, misalignment of the axis of the crystal's rotation respect to the axis of the thermal symmetry, concentration overcooling, and other issues. 7 Together, these factors cause fluctuations in growth rate that are responsible for variations in the crystal's composition, entailing the formation of growth striations. 7 A solution for that is try to re-grow the crystal by the vertical Bridgman method.…”

“…7 Together, these factors cause fluctuations in growth rate that are responsible for variations in the crystal's composition, entailing the formation of growth striations. 7 A solution for that is try to re-grow the crystal by the vertical Bridgman method. 7 We can consider the topography shown in Fig.…”

“…7 A solution for that is try to re-grow the crystal by the vertical Bridgman method. 7 We can consider the topography shown in Fig. 2b as plane wave x-ray topography due to the experimental setup we described in the section 2.…”

“…The Czochralski technique, usually is employed to grow GaSb crystals. 1,[3][4][5][6][7] Imperfections are expected (e.g., swirls, inclusions and dislocations) during growth that affect the crystal's structure and its electronic properties. Intrinsic GaSb single-crystals are always p-type.…”