Growth, structural and electrical properties of AlN/Si (111) for futuristic MEMS applications

Pandey, Akhilesh; Dutta, Shankar; Gupta, Nishi; Gupta, Garima; Raman, R.; Kaur, Davinder

doi:10.1016/j.mssp.2020.105567

Cited by 14 publications

(4 citation statements)

References 42 publications

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“…[40]. The dielectric constant of AlN at a frequency of 1 MHz for samples grown at 75, 100, 125, 150 and 175 W is 1.7, 4.6, 7.2, 16.7 and 6.8, respectively, and are shown in Figure 7c, which is in comparison to earlier reported values [41, 42].…”

Section: Resultssupporting

confidence: 50%

“…Using this value at the accumulation region, we can calculate the relative dielectric constant of AlN by the formula given by Abdallah et al [40]. The dielectric constant of AlN at a frequency of 1 MHz for samples grown at 75, 100, 125, 150 and 175 W is 1.7, 4.6, 7.2, 16.7 and 6.8, respectively, and are shown in Figure 7c, which is in comparison to earlier reported values [41,42].…”

Section: Electrical Propertiessupporting

confidence: 56%

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A strong dependence of sputtering power on c‐axis oriented aluminium nitride on Si (111): A structural and electrical study

Sanjeeva,

Rudresh,

Vinayakumar

et al. 2024

IET Nanodielectrics

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Growing and controlling the c‐axis orientation of the aluminium nitride (AlN) thin film on unheated Si (111) substrates using reactive magnetron sputtering are challenging. Sputtering parameters such as nitrogen concentration and sputtering power were effectively tuned to grow the c‐axis oriented AlN thin film. The results show that a low concentration of (25%) N2 is enough for forming AlN at a reduced flow rate, whereas a higher flow rate requires a higher concentration of N2. Low concentration with a low flow rate is preferred to grow AlN at low temperature and power. The poor crystallinity of AlN with (100) orientation was improved by varying the power from 75 to 175 W. The X‐ray diffraction results confirmed the improvisation of crystallinity of grown AlN films and indicated the strong dependence of preferred c‐axis orientation on sputtering power. Also, the dependence of sputtering power on microstrain and stress was analysed. The surface morphology study by field emission scanning electron microscopy and topography measured by an atomic force microscope shows a dependence on sputtering power. The high c‐axis orientation was observed at 175 W with low surface roughness, low leakage current density (2 × 10−9 A/cm2) and low dielectric constant (6.8).

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Section: Resultssupporting

confidence: 50%

Section: Electrical Propertiessupporting

confidence: 56%

A strong dependence of sputtering power on c‐axis oriented aluminium nitride on Si (111): A structural and electrical study

Sanjeeva,

Rudresh,

Vinayakumar

et al. 2024

IET Nanodielectrics

View full text Add to dashboard Cite

show abstract

“…The difference between samples can be seen in tables. -0.79 GPa (sample-1) (Yang et al, 2011), -0.73 GPa (sample-2), -0,78 GPa (sample-3) and 0,49 GPa (sample-4) (Pandey et al, 2021) values are gained from sin2Ψ method and they are in good accordance with WH models.…”

Section: Figure 1 Plots Of Cos Vs 1/ Gained From Scherrer Methodsmentioning

confidence: 71%

“…(1) Parameters in this method are gained from HR-XRD pattern using Scherrer method (Pandey et al, 2021). In equation ( 1) k is approximately equal to 1.…”

Section: 𝛽 = 𝑘 𝐿𝑐𝑜𝑠mentioning

confidence: 99%

HR-XRD and AFM Analysis of AlN/SiC Structures for Optoelectronic Device Applications

Bayal,

Demir,

Bılgılı

et al. 2024

Gazi University Journal of Science Part A: Engineering and Innovation

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In article AlN/SiC structure is in examineted. The mentioned structure is grown by using metal organic chemical vapor deposition (MOCVD)technique. In the structure, SiC substrate is used with 100, 130, 140 and 150 nm thick AlN buffer layers. X-ray diffraction (XRD) results showed that all four samples are in Wurtsite structure. Strain cases, dislocation densities and other micro-structural properties of samples are examined. XRD peak broadening data are used to gain crystallite size and strain values by using Williamson-Hall (WH) method. High resolution x-ray diffraction (HR-XRD) peak analysis is used with Scherrer, WH, modified WH, uniform deformation model (U-DM), uniform stress deformation model (US-DM), uniform deformation energy density model (UDE-DM). Crystallite size, strain, stress, energy density values are gained by using Young module.

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Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering

Bakri

Nafarizal

Shuhaimi

et al. 2022

J Mater Sci: Mater Electron

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Growth, structural and electrical properties of AlN/Si (111) for futuristic MEMS applications

Cited by 14 publications

References 42 publications

A strong dependence of sputtering power on c‐axis oriented aluminium nitride on Si (111): A structural and electrical study

A strong dependence of sputtering power on c‐axis oriented aluminium nitride on Si (111): A structural and electrical study

HR-XRD and AFM Analysis of AlN/SiC Structures for Optoelectronic Device Applications

Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering

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