Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3

Park, Kwangchol; Yun, Won-Deok; Choi, Byoungjun; Kim, Heon-Do; Lee, Wonjun; Rha, Sa‐Kyun; Park, Chong Ook

doi:10.1016/j.tsf.2009.01.118

Cited by 54 publications

(49 citation statements)

References 5 publications

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“…However, despite the many advances in ALD, depositing SiN x by ALD has turned out to be very challenging. [1][2][3][4][5][6] This is especially the case when low impurity levels and low wet-etch rates are required, combined with the need to be deposited at low substrate temperatures (<400 C) from halide-free precursors. 1 Similar as for other nitride ALD processes, plasmas can be used during the reactant step to increase the surface reactivity.…”

mentioning

confidence: 99%

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Knoops

Peuter

Kessels

2015

Applied Physics Letters

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The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiNx by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiNx by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiNx ALD using SiH2(NHtBu)2 as precursor and N2 plasma as reactant, the gas residence time τ was found to determine both SiNx film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

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mentioning

confidence: 99%

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Knoops

Peuter

Kessels

2015

Applied Physics Letters

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“…This stringent temperature requirement has shifted focus towards plasma‐assisted ALD of SiN x , mainly using N 2 or NH 3 plasmas . While Cl‐containing Si precursors have been widely used in the ALD of SiN x films, these precursors form corrosive byproducts that can damage the underlying films and the reactor walls. Therefore, aminosilane precursors have recently received attention as potential alternatives to chlorosilane precursors .…”

Section: Introductionmentioning

confidence: 99%

Surface reactions of aminosilane precursors during N₂ plasma‐assisted atomic layer deposition of SiN_x

Leick

Huijs

Ovanesyan

et al. 2019

Plasma Processes & Polymers

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The surface reactions during atomic layer deposition (ALD) of SiNx were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. Specifically, di(sec‐butylamino)silane (DSBAS) and bis(diethylamino)silane (BDEAS) were used as the silicon precursors with N 2 plasma as the nitrogen source for SiN x ALD over a temperature range of 225–375°C. The infrared spectra recorded during each ALD half‐cycle provide unambiguous experimental evidence that surface secondary amines (>NH) are the primary reactive sites for chemisorption of DSBAS and BDEAS on a SiN x surface that was exposed to an N 2 plasma. Based on these observations, we predict that most aminosilane precursors will primarily react with surface >NH groups: This observation is contrary to most atomistic‐level simulations for this reaction that predict a high activation energy barrier.

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“…To address issues related to conformality, the ALD technique has been studied extensively [19 26]; ALD is a cyclic process that offers atomic scale thickness control of the material that is being deposited. In addition, ALD methods can deposit thin films with high quality in terms of low wet etch rate and high conformality at low process temperatures [25,26]. However, ALD methods have several challenges such as a relatively high thermal budget for actual device application and low throughput (GPC > 2 Å/min) that hinders the industrialization of ALD methods [22,26].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, ALD methods can deposit thin films with high quality in terms of low wet etch rate and high conformality at low process temperatures [25,26]. However, ALD methods have several challenges such as a relatively high thermal budget for actual device application and low throughput (GPC > 2 Å/min) that hinders the industrialization of ALD methods [22,26]. By assisting with a plasma for dissociating reactive gases during ALD with PEALD processes, a thin film with a good step coverage on a high aspect ratio structure can be deposited at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

A Brief Review of Plasma Enhanced Atomic Layer Deposition of Si₃N₄

jin

Kimkiseok

Kimkihyun

et al. 2019

ASCT

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Silicon nitride (SiN x) thin films have attracted interest as an important material for use in next-generation devices such as a gate spacer in 3D fin field-effect transistors (finFETs), charge trap layers, etc. Many studies using the SiN x plasma enhanced atomic layer deposition (PEALD) method have been conducted, owing to its advantages over other SiN x deposition methods. In this review, the recent studies on PEALD of SiN x thin films are summarized, and the effects of some process parameters including plasma power, frequency, and process temperature on the material properties of SiN x are discussed. In addition, some properties of SiN x thin films such as conformality, wet etch rate, and others are reviewed.

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Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3

Cited by 54 publications

References 5 publications

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Surface reactions of aminosilane precursors during N₂ plasma‐assisted atomic layer deposition of SiN_x

A Brief Review of Plasma Enhanced Atomic Layer Deposition of Si₃N₄

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Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3

Cited by 54 publications

References 5 publications

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Surface reactions of aminosilane precursors during N2 plasma‐assisted atomic layer deposition of SiNx

A Brief Review of Plasma Enhanced Atomic Layer Deposition of Si3N4

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Surface reactions of aminosilane precursors during N₂ plasma‐assisted atomic layer deposition of SiN_x

A Brief Review of Plasma Enhanced Atomic Layer Deposition of Si₃N₄