Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy

Kumagai, Yoshinao; Mori, Ryuji; Ishimoto, Kouichi; Park, Kyung–ho; Hasegawa, Fumio

doi:10.1143/jjap.34.4593

Cited by 11 publications

(5 citation statements)

References 18 publications

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“…During further growth, the period reverted to the normal 2 ML. Layer-by-layer growth via 4-ML-height 2D Si islands was also reported recently in case of 1 ML boron coverage on Si(111) at T < 600 °C [3].…”

Section: A Rheed Investigations Of Intial Si Growth Stages As Functisupporting

confidence: 74%

“…Thus, the outer surface of the Si(111)-(¥3x¥3)B phase contains only Si adatoms without dangling bonds [1] and is free of surface states [2]. As reported recently, boron acts there as a subsurfactant by a change of the growth mode towards layerby-layer growth via nucleation of Si islands 4 MLs high [3,4]. The islands are nucleated in twin positions with respect to the substrate resulting in a change of Si epitaxial layer orientation [5,6].…”

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confidence: 81%

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Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

Fissel

Krügener

Bugiel

et al. 2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boroncovered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch sites on the surface with only slightly deeper depression in the flat surface potential without significant bonding to the neighboring atoms. Deposition of Si at temperature below 800 K results in a layer-by-layer growth via nucleation and coalescence of two-bilayer Si islands on top of the initially formed van der Waals like buffer Si buffer layer, before the transition in the normal double layer growth mode occurred. The grown Si layers were found in twin position with respect to the underlying Si(111) substrate, resulting in a stacking fault in the substrate/layer interface. Structures with twin boundaries arranged periodically along the [111]-direction and separated by only a few Si double layers were obtained by repetition of a multi-step procedure several times. In such a way we obtained structures with regions of a twin repeat sequence ranging from 12 Si bilayers, corresponding to a twinning-superlattice, down to 4 bilayers, what is equivalent to a hexagonal 8H-Si polytype.

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Section: A Rheed Investigations Of Intial Si Growth Stages As Functisupporting

confidence: 74%

mentioning

confidence: 81%

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

Fissel

Krügener

Bugiel

et al. 2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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“…From the viewpoint of electrical properties, the fact that B atoms preserved in the ffiffi ffi 3 p Â ffiffi ffi 3 p reconstruction at the amorphous-Si/Si(111) interface are electrically active has received much attention. [1][2][3][4][5] From the structural control point of view, our attention has focused on the fact that homoepitaxial Si layers grown at 400 C on Si (111) ffiffi ffi 3 p Â ffiffi ffi 3 p -B have an orientation rotated by 180 with respect to the substrate, i.e., twinned orientation. 6) Using this phenomenon, we have succeeded in growing a new type of single crystal Si.…”

Section: Introductionmentioning

confidence: 99%

Growth of Twinned Epitaxial Layers on Si(111)√3×√3-B Studied by Low-Energy Electron Microscopy

Hibino

Watanabe

2005

Jpn. J. Appl. Phys.

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Low-energy electron microscopy (LEEM) was used to investigate Si homoepitaxial growth on Si(111)√3×√3-B. Dark-field LEEM images using the (1,0) spot clearly indicate that two-dimensional islands twinned with respect to the substrate nucleate in the initial growth stage. Coalescence of the twinned islands forms twinned epitaxial layers at low growth temperatures. At high temperatures, however, twinned islands are transformed into untwinned islands even during growth, which suggests that small islands favor the twinned orientation, but that the energy difference between twinned and untwinned islands is reversed at a certain island size. After twinned epitaxial layer growth, we also observed transformation into untwinned layers by annealing. The transformation proceeds through the motion of the boundary between twinned and untwinned layers along the surface.

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“…The ratio of the number of Si atoms in the 2BL islands to the number of the total deposited Si atoms depends on B . 5, 13 We, therefore, investigated the growth process of totally twinned layers. BL and 2BL islands differ not only in height but also in their epitaxial relationship with the substrate.…”

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confidence: 99%

Twinned epitaxial layers formed on Si(111)√3×√3-B

Hibino

Sumitomo

Ogino

1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We investigate the growth process of twinned epitaxial Si layers on Si(111)√3×√3-B and their thermal stability. In the initial growth stages, twinned two-bilayer-high (2-BL-high) and untwinned BL-high islands are formed, and at higher surface B concentration, there are more twinned 2BL islands than untwinned BL islands. Domain boundaries of the √3×√3 reconstruction act as preferential island nucleation sites, especially for untwinned BL islands. Therefore, to grow epitaxial layers twinned with the already-grown twinned layers, post-growth anneal is essential to increase the surface B concentration and to reduce the domain boundary density. On the other hand, the temperature at which twinned layers are transformed into untwinned layers strongly depends on the thickness. We demonstrate the possibility of growing superlattices of layers that have twinned and untwinned orientations with the substrate (polytypes) by precisely controlling the growth and post-growth anneal parameters.

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Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy

Cited by 11 publications

References 18 publications

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

Growth of Twinned Epitaxial Layers on Si(111)√3×√3-B Studied by Low-Energy Electron Microscopy

Twinned epitaxial layers formed on Si(111)√3×√3-B

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