Guided Growth of Horizontal GaN Nanowires on Quartz and Their Transfer to Other Substrates

Abstract

The guided growth of horizontal nanowires has so far been demonstrated on a limited number of substrates. In most cases, the nanowires are covalently bonded to the substrate where they grow and cannot be transferred to other substrates. Here we demonstrate the guided growth of well-aligned horizontal GaN nanowires on quartz and their subsequent transfer to silicon wafers by selective etching of the quartz while maintaining their alignment. The guided growth was observed on different planes of quartz with varying degrees of alignment. We characterized the crystallographic orientations of the nanowires and proposed a new mechanism of "dynamic graphoepitaxy" for their guided growth on quartz. The transfer of the guided nanowires enabled the fabrication of back-gated field-effect transistors from aligned nanowire arrays on oxidized silicon wafers and the production of crossbar arrays. The guided growth of transferrable nanowires opens up the possibility of massively parallel integration of nanowires into functional systems on virtually any desired substrate.

Guided Growth of Horizontal ZnS Nanowires on Flat and Faceted Sapphire Surfaces

“…Various semiconducting materials such as GaN 13,[19][20][21] , ZnO [22][23][24] , ZnSe [25][26] , ZnTe 27 , CdSe 28 , CdS [29][30] and CsPbBr3 31 were grown into aligned NW arrays, guided by epitaxial and graphoepitaxial relationships with the substrate. The epitaxial growth is usually driven by the minimization of the mismatch between the NW and the substrate, which controls the growth along specific lattice directions and crystallographic orientation ( Figure.…”

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

“…Moreover, a nonpolar-plane-based heteroepilayer grown on a -plane GaN or r -plane sapphire substrates is still needed to prevent the formation of structural defects such as prismatic and basal stacking faults as well as partial dislocations to ensure sufficient crystal quality [ 5 , 6 ]. In fact, the results of research on GaN nanorods (NRs) and nanowires (NWs) have produced advances and interesting outcomes in a number of application fields [ 7 – 9 ]. Among them, the selective-area growth (SAG) of GaN NRs is a particularly promising alternative for producing nonpolar-based LED structures without increasing the production cost of devices or introducing structural defects owing to their unique characteristics.…”

A Flexible GaN Nanowire Array‐Based Schottky‐Type Visible Light Sensor with Strain‐Enhanced Photoresponsivity

“…[ 26 ] According to the strong PL emission in the visible region of 400 to 750 nm, the CVD-grown GaN nanowires have deep energy levels or bands in the GaN band gap, which shows the effective electron states for electronic transition and visible photoelectric conversion. [17][18][19][20][21][22][23] Recently, the piezophototronic effect was used to improve the performance of photodetectors. To determine the photoresponse performance of the fl exible Flexible optoelectronic devices are of great interests in various applications, including rollable displays, soft touchscreens, fl exible solar cells, and fl exible solid-state lighting, because they can be fabricated with a large area, are low in cost and fi t various surfaces.…”

“…[13][14][15][16] However, GaN nanostructures are diffi cult to grow directly on a fl exible polymer substrate due to their high fabrication temperature, which seriously hinders the further development of GaN-based fl exible optoelectronic or nanophotonic applications. [17][18][19][20][21][22][23] Recently, the piezophototronic effect was used to improve the performance of photodetectors. For example, an individual ZnO micro/nanowire-based photodetector can enhance the photoresponsivity by more than 500% under compressive strain.…”