2015
DOI: 10.1002/aelm.201500169
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A Flexible GaN Nanowire Array‐Based Schottky‐Type Visible Light Sensor with Strain‐Enhanced Photoresponsivity

Abstract: A flexible GaN nanowire array‐based Schottky‐type visible light sensor with high sensitivity and responsivity is fabricated by transferring GaN nanowire arrays from a SiO2/Si substrate to a transparent and flexible polyethylene terephthalate substrate. The external strains/forces can improve the photoresponse of the flexible light sensor by up to 1100% via the piezo‐phototronic effect.

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Cited by 29 publications
(22 citation statements)
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“…Using these methods, arrays of vertically oriented CdS 14 and Si 11,19 NWs have been fabricated on flexible substrates. Regarding group-III nitrides, the material of choice for solid-state lighting and high-power electronics, the integration of GaN NWs on flexible substrates has been achieved either by transferring NW arrays grown on Si to polymer films 20,21 or by a lift-off process of NW ensembles grown on graphene coated Cu substrates. 22 Metal foils are a particularly interesting type of substrate because they are not only flexible but also exhibit excellent electrical and thermal conductivities as well as a high optical reflectance.…”
mentioning
confidence: 99%
“…Using these methods, arrays of vertically oriented CdS 14 and Si 11,19 NWs have been fabricated on flexible substrates. Regarding group-III nitrides, the material of choice for solid-state lighting and high-power electronics, the integration of GaN NWs on flexible substrates has been achieved either by transferring NW arrays grown on Si to polymer films 20,21 or by a lift-off process of NW ensembles grown on graphene coated Cu substrates. 22 Metal foils are a particularly interesting type of substrate because they are not only flexible but also exhibit excellent electrical and thermal conductivities as well as a high optical reflectance.…”
mentioning
confidence: 99%
“… 19 , 28 Following this method, a flexible Schottky photodiode based on CVD-grown GaN NWs has been demonstrated. 29 Unfortunately, deep defects in CVD-grown GaN wires yield a strong photoresponse in the visible spectral range, which does not allow for selective detection of UVA. It is desirable to replace the defect-related absorption by the above-bandgap absorption, which can be better controlled in particular by using ternary alloys for tuning the absorption edge.…”
Section: Introductionmentioning
confidence: 99%
“…[111][112][113] The visible light sensing is used in the development of electronic eye and face recognition system. [114][115][116] The UV imaging can be used for power line inspection, oil spill detection, remote sensing, skin condition monitoring, and forensic medicine. [117] Flexible image sensors have a higher potential for widespread applications, as compared with traditional rigid photodetectors.…”
Section: Flexible Image Sensingmentioning
confidence: 99%