Guided Growth of Millimeter-Long Horizontal Nanowires with Controlled Orientations

Tsivion, David; Schvartzman, Mark; Popovitz‐Biro, Ronit; Huth, Palle von; Joselevich, Ernesto

doi:10.1126/science.1208455

Cited by 253 publications

(376 citation statements)

References 36 publications

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“…This behavior resembles previous guided growth reports of GaN, 28 ZnO, 29 ZnSe, 40 ZnTe 41 and CdSe 44 nanowires on C-plan sapphire. HRTEM imaging of a cross sectional lamellae 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 interfacial energy and stain that is accumulated during the heteroepitaxial growth.…”

Section: Epitaxial Guided Growth On Flat Sapphire Substratessupporting

confidence: 72%

“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 4 The guided growth approach can offer an advantageous alternative to post-growth methods and facilitate the transition towards large scale single-nanowire research and nanowire-based functional systems. 28 Guided growth exploits epitaxial and graphoepitaxial relationships between the nanowire material and the substrate to guide horizontal nanowires during a vapor liquid solid (VLS) growth, as illustrated in Figure 1A, and bring about well aligned nanowires that grow in specific and reproducible directions and crystallographic orientations. 29 Furthermore, by incorporating a top-down nanolithography process, an array of discrete nanowires with control over their origin, growth direction, crystallographic orientation, and length can be achieved.…”

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confidence: 99%

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Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Oksenberg¹,

Martí‐Sánchez

Popovitz‐Biro³

et al. 2017

ACS Nano

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The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface−material interactions have been used, with different materials and substrates, to guide horizontal nanowires during their growth into well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial and not radial. Here, we demonstrate the guided growth of horizontal core−shell nanowires, specifically of ZnSe@ZnTe, with control over their crystal phase and crystallographic orientations. We exploit the directional control of the guided growth for the parallel production of multiple radial p−n heterojunctions and probe their optoelectronic properties. The devices exhibit a rectifying behavior with photovoltaic characteristics upon illumination. Guided nanowire heterostructures enable the bottom-up assembly of complex semiconductor structures with controlled electronic and optoelectronic properties.

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Section: Epitaxial Guided Growth On Flat Sapphire Substratessupporting

confidence: 72%

mentioning

confidence: 99%

Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Oksenberg¹,

Martí‐Sánchez

Popovitz‐Biro³

et al. 2017

ACS Nano

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“…Thus, the building blocks integrate themselves into the system, as one of the layers in the overall design. Here we demonstrate the feasibility of this "self-integration" concept with the parallel fabrication of large numbers of devices and complex circuits, based on guided growth of horizontal NWs (5).…”

Section: D Nanostructuresmentioning

confidence: 99%

“…Here, we have successfully applied the vectorial growth concept to produce large ordered arrays of perfectly placed discrete NWs, thanks to the high yield of NW growth from patterned catalyst nanoparticles. We used these arrays for the parallel fabrication of a large number of NW-based devices, as well as for their integration into complex logic circuits.Implementation of the vectorial growth concept requires independent control of each of the vector parameters, (x, y), φ, and L. Recently, we reported the guided growth of perfectly aligned horizontal GaN and ZnO NWs on different planes of sapphire (5,20). The growth directions and crystallographic orientations of the NWs were determined by their epitaxial relationship with the substrate, as well as by a graphoepitaxial effect that guided their growth along surface steps and grooves.…”

mentioning

confidence: 99%

“…Implementation of the vectorial growth concept requires independent control of each of the vector parameters, (x, y), φ, and L. Recently, we reported the guided growth of perfectly aligned horizontal GaN and ZnO NWs on different planes of sapphire (5,20). The growth directions and crystallographic orientations of the NWs were determined by their epitaxial relationship with the substrate, as well as by a graphoepitaxial effect that guided their growth along surface steps and grooves.…”

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confidence: 99%

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Self-integration of nanowires into circuits via guided growth

Schvartzman

Tsivion

Mahalu

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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The ability to assemble discrete nanowires (NWs) with nanoscale precision on a substrate is the key to their integration into circuits and other functional systems. We demonstrate a bottom-up approach for massively parallel deterministic assembly of discrete NWs based on surface-guided horizontal growth from nanopatterned catalyst. The guided growth and the catalyst nanopattern define the direction and length, and the position of each NW, respectively, both with unprecedented precision and yield, without the need for postgrowth assembly. We used these highly ordered NW arrays for the parallel production of hundreds of independently addressable single-NW field-effect transistors, showing up to 85% yield of working devices. Furthermore, we applied this approach for the integration of 14 discrete NWs into an electronic circuit operating as a three-bit address decoder. These results demonstrate the feasibility of massively parallel "self-integration" of NWs into electronic circuits and functional systems based on guided growth.T he sustained progress in semiconductor technology introduces new challenges associated with the scaling and functionality of nanosize components. In the face of these challenges, alternative unconventional device and fabrication concepts based on bottom-up assembly of synthetic nanostructures are being intensively explored (1). These nanostructures, such as quantum dots (2), nanotubes (3), and nanowires (NWs) (4), can be chemically synthesized with exquisite control over their structures and properties down to the atomic level. On the other hand, their self-assembly alone is unlikely to produce the arbitrary geometries and long-range order that are required for their integration into functional systems. To realize such systems, bottomup assembly may be used as a complementary step in a sequence of top-down fabrication processes. Such a hybrid top-down/ bottom-up approach can be based on the directed self-assembly of building blocks onto a lithographically produced template to fit the design of an integrated functional system. Thus, the building blocks integrate themselves into the system, as one of the layers in the overall design. Here we demonstrate the feasibility of this "self-integration" concept with the parallel fabrication of large numbers of devices and complex circuits, based on guided growth of horizontal NWs (5).NWs are attractive building blocks for the bottom-up assembly of nanoscale devices and functional systems with potential applications in nanoelectronics (6), photonics (7), renewable energy (8), and biology (9). They can be synthesized with precisely controlled nanoscale dimensions and chemical compositions (10). Moreover, they may be structured to possess unique electronic properties, such as ballistic conductivity due to confinement of a 1D charge-carrier gas in core-shell NWs (11). The potential of NW-based electronics has been demonstrated for various NW materials (12). However, most studies were done at the single-device level. The main obstacle toward NW integration...

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Metal‐Organic Vapor Phase Epitaxy Growth of GaN Nanorods

Eymery¹

2014

Wide Band Gap Semiconductor Nanowires 1

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Guided Growth of Millimeter-Long Horizontal Nanowires with Controlled Orientations

Cited by 253 publications

References 36 publications

Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Self-integration of nanowires into circuits via guided growth

Metal‐Organic Vapor Phase Epitaxy Growth of GaN Nanorods

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