Gunn Diodes Based on Graded InGaP-InPAs

Storozhenko, I. P.; Kaydash, M. V.

doi:10.21272/jnep.10(4).04014

Cited by 3 publications

(2 citation statements)

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“…For instance, the generation of noise and the operation of avalanche diodes are based on the impact ionization effect. Another diode based on the impact ionization effect is a diode with a cathode static domain [11,12]. For instance, in [11], noise generation is obtained experimentally in GaAs-based diode in the X-band and is possible in the higher frequency range.…”

Section: Introductionmentioning

confidence: 99%

Features of Noise Generation in Graded-Gap III Nitride-based Diodes

Prykhodko¹,

Plaksin²

2022

J. Nano- Electron. Phys.

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The paper reports the result of our research on graded-gap diodes with a cathode static domain as possible noise sources for different modern applications based on the use of THz wave frequencies. Such diodes represent a two-terminal n + -n  -nn + structure containing a cathode graded-gap layer with a band gap that increases from the cathode contact towards the n-region. We study GaN and AlN based diodes with InzGa1-zN and InzAl1-zN based graded-gap layers, respectively. It is shown that the localization of a strong electric field and low values of impact ionization threshold can be achieved by using a graded-gap layer with a narrow-gap material on the cathode. The diode simulation is performed using ensemble Monte Carlo technique. Noise generation is investigated numerically with time sampling of electric current over the time domain. The influence of scattering mechanisms acting on charge carriers on the noise properties of the diode is explored. Analyzing the noise power spectral density (NPSD), it is found that maximum NPSD can be observed in GaN diodes with InzGa1-zN layer, and the NPSD magnitude depends both on the size of the n --region (at a fixed diode length) and on the position of the graded-gap layer with respect to the end of the high resistance region (n -). It is established that polar phonon scattering and alloy-disorder scattering are the main mechanisms affecting the noise properties of the diodes. It is shown that the diodes demonstrate bias voltage regions where the dependence of NPSD on bias voltage is linear, and the value of NPSD increases by an order of magnitude.

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Section: Introductionmentioning

confidence: 99%

Features of Noise Generation in Graded-Gap III Nitride-based Diodes

Prykhodko¹,

Plaksin²

2022

J. Nano- Electron. Phys.

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“…Найпоширенішою на сьогодні варізонною сполукою для діодів Ганна є AlGaAs -GaAs. Ідея використання варізонного GaInPAs у діодах Ганна [20] є цікавою та перспективною.…”

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On increasing power of short InGaPAs graded-gap Gunn diodes

2019

Visnyk of V.N. Karazin Kharkiv National University, Series “Radio Physics and Electronics”

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Background. The problem of development of the terahertz range with solid state devices remains relevant today. Gunn diodes, IMPATT diodes, resonant tunneling diodes and others are used as active elements. At frequencies above 100 GHz, these devices have a number of physical problems that limit maximum operation from above. One of the possibilities of creating high-frequency Gunn diodes is the use of various graded-gap multicomponent semiconductor compounds. Gunn diodes based on such compounds have higher generation efficiency and, accordingly, output power. Objectives. Multicomponent semiconductors, the fractional composition of which varies in space, can improve the interaction of the electric field and electrons in devices operating on the effect of intervalley electron transfer. To achieve the best effect, such a semiconductor should have an optimal coordinate dependence between the nonequivalent valleys of the conduction band. Therefore, the aim of the work is to investigate the dependences of the effective generation of current oscillations in the terahertz range based on a graded-gap semiconductor Ga1-x(z)Iny(z)Py(z)As1-y(z). Materials and methods. Using mathematical modeling n+ - n - n+ Gunn diodes based on a graded-gap semiconductor Ga1-x(z)Iny(z)Py(z)As1-y(z) with active region length being 1,0 µm and the concentration of ionized impurities in it being 9×1016 cm–3 are considered. The study was carried out based on the solving Boltzmann kinetic equation for a three-level Г–L–X model of intervalley electron transfer. The resulting system of equations is solved numerically and allows one to get the dynamic distribution of the concentration of charge carriers, their energy, current density, electric field strength, and the voltage drop across the diode. Results. It is shown that in graded-gap diodes based on Ga1-x(z)Iny(z)Py(z)As1-y(z) some domain current instability mode can be implemented. Unlike similar devices based on homogeneous semiconductors, such as GaAs, InP or Ga0,5In0,5As, in diodes based on graded-gap Ga1-x(z)Iny(z)Py(z)As1-y(z) undamped current oscillations occur. The maximum power of the main mode of such oscillations is 19 mW at a frequency of 95 GHz. Higher harmonics are present in the oscillations spectrum: the power of the second harmonic is 1,6 mW, and that of the third is 0,3 mW. The frequency and power of self-oscillations in graded-gap diodes depends on the composition of the semiconductor compound both in the anode and in the cathode and is observed at optimal values of the applied voltage. Conclusions. Graded-gap Gunn diodes based on Ga1-x(z)Iny(z)Py(z)As1-y(z) with active region length being 1,0 µm and the concentration of ionized impurities in it being 9×1016 cm–3 are able to generate continuous current oscillations in a fairly wide frequency range due to efficient operation at the main, second and third harmonics. The research results can be used in the development of high-frequency devices for various scientific research.

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