H2, H2S gas sensing properties of rGO/GaN nanorods at room temperature: Effect of UV illumination

Reddeppa, Maddaka; Park, Byung-Guon; Kim, Moon‐Deock; Peta, Koteswara Rao; Chinh, Nguyen Duc; Kim, Dojin; Kim, Song-Gang; Murali, G.

doi:10.1016/j.snb.2018.03.018

Cited by 75 publications

(29 citation statements)

References 39 publications

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“…Considering the low power consumption towards practical application, further experiments on developing low-temperature (<200 °C) N-incorporated SnO 2 gas sensors still need to be done in our future work. There are several good strategies such as the introduction of heterostructures [50], morphologies controlling [51], surface synergy [52,53], and molecule sieving layer coatings [49], etc.…”

Section: Resultsmentioning

confidence: 99%

Incorporating N Atoms into SnO2 Nanostructure as an Approach to Enhance Gas Sensing Property for Acetone

et al. 2019

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The development of high-performance acetone gas sensor is of great significance for environmental protection and personal safety. SnO2 has been intensively applied in chemical sensing areas, because of its low cost, high mobility of electrons, and good chemical stability. Herein, we incorporated nitrogen atoms into the SnO2 nanostructure by simple solvothermal and subsequent calcination to improve gas sensing property for acetone. The crystallization, morphology, element composition, and microstructure of as-prepared products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Electron paramagnetic resonance (EPR), Raman spectroscopy, UV–visible diffuse reflectance spectroscopy (UV–vis DRS), and the Brunauer–Emmett–Teller (BET) method. It has been found that N-incorporating resulted in decreased crystallite size, reduced band-gap width, increased surface oxygen vacancies, enlarged surface area, and narrowed pore size distribution. When evaluated as gas sensor, nitrogen-incorporated SnO2 nanostructure exhibited excellent sensitivity for acetone gas at the optimal operating temperature of 300 °C with high sensor response (Rair/Rgas − 1 = 357) and low limit of detection (7 ppb). The nitrogen-incorporated SnO2 gas sensor shows a good selectivity to acetone in the interfering gases of benzene, toluene, ethylbenzene, hydrogen, and methane. Furthermore, the possible gas-sensing mechanism of N-incorporated SnO2 toward acetone has been carefully discussed.

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Section: Resultsmentioning

confidence: 99%

Incorporating N Atoms into SnO2 Nanostructure as an Approach to Enhance Gas Sensing Property for Acetone

et al. 2019

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“…This scenario requires unified gas sensors with excellent selectivity, reliability [ 128 ], high sensitivity [ 129 ], fast response, long-term stability, cost-effectiveness, and workability at low gas concentrations [ 130 , 131 , 132 , 133 ]. An ample gas-sensing span is also necessary [ 134 ]; the ideal range of sensing gas detectors is 10–1000 ppm [ 135 ]. Gas detectors that can maneuver in highly corrosive environments and at extreme temperatures are mandatory in the automotive and aerospace industries [ 134 , 136 , 137 ].…”

Section: Applications Of (In)gan Nanostructuresmentioning

confidence: 99%

“…An ample gas-sensing span is also necessary [ 134 ]; the ideal range of sensing gas detectors is 10–1000 ppm [ 135 ]. Gas detectors that can maneuver in highly corrosive environments and at extreme temperatures are mandatory in the automotive and aerospace industries [ 134 , 136 , 137 ].…”

Section: Applications Of (In)gan Nanostructuresmentioning

confidence: 99%

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Soopy

Tang

et al. 2021

Nanomaterials

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This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

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“…As the development of GaN is just beginning, data pertaining to its mechanical properties are sparse [110]. The GaN materials system is drawing a great deal of attention for its commercial applications [112] since GaN provides a new approach to improve the performance of gas sensors in terms of the operating temperature and response time [113]. Owing to the wide bandgap of the material, it is very thermally stable and its electronic devices can operate at up to 500 degrees Celsius [112].…”

Section: Rationale For Evaluating the Materials Si Gaas And Ganmentioning

confidence: 99%

“…Nowadays, the GaN can be produced on a large scale with a mature preparation process [111]. Meanwhile, according to Reddeppa et al [113], GaN provides a new approach to improve the performance of gas sensors in terms of the operating temperature and response time [113]. Apparently, the GaN will be one of the most suitable materials for future MEMS design.…”

Section: Contributionsmentioning

confidence: 99%

Evaluation and Selection of Materials for Particulate Matter MEMS Sensors by Using Hybrid MCDM Methods

et al. 2018

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Air pollution poses serious problems as global industrialization continues to thrive. Since air pollution has grave impacts on human health, industry experts are starting to fathom how to integrate particulate matter (PM) sensors into portable devices; however, traditional micro-electro-mechanical systems (MEMS) gas sensors are too large. To overcome this challenge, experts from industry and academia have recently begun to investigate replacing the traditional etching techniques used on MEMS with semiconductor-based manufacturing processes and materials, such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon. However, studies showing how to systematically evaluate and select suitable materials are rare in the literature. Therefore, this study aims to propose an analytic framework based on multiple criteria decision making (MCDM) to evaluate and select the most suitable materials for fabricating PM sensors. An empirical study based on recent research was conducted to demonstrate the feasibility of our analytic framework. The results provide an invaluable future reference for research institutes and providers.

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H2, H2S gas sensing properties of rGO/GaN nanorods at room temperature: Effect of UV illumination

Cited by 75 publications

References 39 publications

Incorporating N Atoms into SnO2 Nanostructure as an Approach to Enhance Gas Sensing Property for Acetone

Incorporating N Atoms into SnO2 Nanostructure as an Approach to Enhance Gas Sensing Property for Acetone

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Evaluation and Selection of Materials for Particulate Matter MEMS Sensors by Using Hybrid MCDM Methods

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