Hafnium Content Dependence of Bottom Interfacial Layer and Its Impact on HfxAl1-xOy High-k nMOSCAPs and nMOSFETs Characteristics

Tamura, Y.; Sugiyama, Yoshihiro; Yamaguchi, Masaomi; Minakata, H.; Tanida, Yoshiaki; Sakoda, T.; Nakamura, Makoto; Nara, Yasuo

doi:10.7567/ssdm.2003.c-1-5

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“…increases with increasing Hf=ðAl þ HfÞ ratio, as similarly observed for the experimental results. [1][2][3][4] " lat is larger than " ele . Even at the same Hf=ðAl þ HfÞ ratio, " lat depends on the model structure, whereas the dependence of the model structure on " ele is small.…”

Section: Amorphous Models and Static Dielectric Constantsmentioning

confidence: 93%

“…Previous experimental studies showed that the dielectric constants of a-HfAlOs increase from a-Al 2 O 3 values to a-HfO 2 values with increasing Hf=ðAl þ HfÞ ratio, whereas the crystallization temperature of a-HfAlOs decreases as the Hf=ðAl þ HfÞ ratio increases. [1][2][3][4] Thus a-HfAlOs having Hf=ðAl þ HfÞ ratios in the range of 20 -40% have been proposed to be most suited as high-k gate dielectrics for next-generation CMOS transistors.…”

Section: Introductionmentioning

confidence: 99%

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First-Principles Study of Dielectric Properties of Amorphous High-k Materials

Momida

Hamada

Ohno

2007

jjap

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The dielectric properties of amorphous alumina (a-Al2O3), hafnia (a-HfO2), and hafnium aluminate (a-HfAlO) having a Hf/(Al+Hf) ratio of 20% have been studied by the first-principles calculation. The calculated dielectric constants of amorphous model structures increase with increasing Hf/(Al+Hf) ratio in terms of both electronic and lattice polarization contributions. The lattice polarization contribution to the dielectric constants is larger than the electronic one. The calculated dielectric functions of the amorphous models show a negligible frequency dispersion at the operation frequencies of current complementary metal–oxide–semiconductor (CMOS) transistors. However, the dielectric functions of the amorphous models have high peaks at much lower frequencies from about 1 THz than those of α-alumina (α-Al2O3) and monoclinic hafnia (m-HfO2) crystals.

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Section: Amorphous Models and Static Dielectric Constantsmentioning

confidence: 93%