Half-terahertz operation of SiGe HBTs

Krithivasan, R.; Lei, Yuan; Cressler, John D.; Rieh, Jae-Sung; Khater, Marwan; Ahlgren, D.; Freeman, G.

doi:10.1109/led.2006.876298

Cited by 96 publications

(32 citation statements)

References 12 publications

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“…This is a significant advantage of the sublimation method for graphene-based electronic applications. Several EG-based devices have already been demonstrated, such as high-frequency field effect transistors with a cutoff frequency of 200 GHz [54]. In addition, EG finds application in metrological resistance standards [55].…”

Section: 1)mentioning

confidence: 99%

Structural and Electronic Properties of Graphene on 4H- and 3C-SiC

Bouhafs¹

2016

Linköping Studies in Science and Technology. Dissertations

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Je dédie cette thèse pour ceux qui sont très loin de moi et très prochesà mon coeur:Pour celle qui vient de l'île des rêves et qui a changè ma vie au plus beau rêve.Pour celle que je dois ma vie. Pour ma famille.Pour ceux qui ne perdent jamais la foi en l'humanité. v ABSTRACTGraphene is a one-atom-tick carbon layer arranged in a honeycomb lattice. Graphene was first experimentally demonstrated by Andre Geim and Konstantin Novoselov in 2004 using mechanical exfoliation of highly oriented pyrolytic graphite (exfoliated graphene flakes), for which they received the Nobel Prize in Physics in 2010. Exfoliated graphene flakes show outstanding electronic properties, e.g., very high free charge carrier mobility parameters and ballistic transport at room temperature. This makes graphene a suitable material for next generation radio-frequency and terahertz electronic devices. Such applications require fabrication methods of large-area graphene compatible with electronic industry. Graphene grown by sublimation on silicon carbide (SiC) offers a viable route towards production of large-area, electronic-grade material on semi-insulating substrate without the need of transfer. Despite the intense investigations in the field, uniform wafer-scale graphene with very high-quality that matches the properties of exfoliated graphene has not been achieved yet. The key point is to identify and control how the substrate affects graphene uniformity, thickness, layer stacking, structural and electronic properties. Of particular interest is to understand the effects of SiC surface polarity and polytype on graphene properties in order to achieve large-area material with tailored properties for electronic applications. The main objectives of this thesis are to address these issues by investigating the structural and electronic properties of epitaxial graphene grown on 4H-SiC and 3C-SiC substrates with different surface polarities.The first part of the thesis includes a general description of the properties of graphene, bilayer graphene and graphite. Then, the properties of epitaxial graphene on SiC by sublimation are detailed. The experimental techniques used to characterize graphene are described. A summary of all papers and contribution to the field is presented at the end of Part I. Part II consists of seven papers.Paper I reports on the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC(000 − 1) with surface defects. We have shown that the average number of graphene layers, the size of the domains with uniform thickness and the crystallite size increase with the increase of temperature. This improved graphene quality is attributed to an enhanced sublimation of Si from the SiC and to the elimination of SiC surface defects by surface restructuring during the sublimation growth. Central result of the paper is the transition from decoupled to Bernal stacked graphene layers with the increase in growth temperature, which is explained by a competition between growth mechanisms. We also determin...

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Section: 1)mentioning

confidence: 99%

Structural and Electronic Properties of Graphene on 4H- and 3C-SiC

Bouhafs¹

2016

Linköping Studies in Science and Technology. Dissertations

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“…Through the use of bandgap engineering, SiGe heterojunction bipolar transistors (HBTs) are reaching performance levels on par with many III-V technologies such as GaAs or InP, and current state-of-the-art SiGe HBTs have demonstrated cutoff frequencies in excess of 350 GHz at room temperature [17]. However, the manufacturing process for SiGe HBTs -unlike their III-V counterpartsis compatible with standard commercial Si manufacturing.…”

Section: Sige Technologymentioning

confidence: 99%

Optimization of SiGe bandgap-based circuits for up to 300°C operation

Thomas

Najafizadeh

Cressler

et al. 2011

Solid-State Electronics

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“…As we demonstrate here, another exciting application for SiGe HBTs is their use in ultra-low-noise cryogenically-cooled receivers. Recent work has focused on the potential for operating aggressively-scaled SiGe HBTs in the cryogenic environment in order to achieve greater than one-half TeraHertz frequency response [2] and [3]. We extend that work here to focus on cooled amplifier circuits implemented using a commericially-available 130 nm SiGe BiCMOS design platform.…”

Section: Introductionmentioning

confidence: 99%

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

Thrivikraman

Yuan

Bardin

et al. 2008

IEEE Microw. Wireless Compon. Lett.

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Abstract-We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date.Index Terms-Heterojunction bipolar transistor (HBT), low noise amplifiers (LNAs), silicon-germanium (SiGe).

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Half-terahertz operation of SiGe HBTs

Cited by 96 publications

References 12 publications

Structural and Electronic Properties of Graphene on 4H- and 3C-SiC

Structural and Electronic Properties of Graphene on 4H- and 3C-SiC

Optimization of SiGe bandgap-based circuits for up to 300°C operation

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

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