Halide Perovskite: A Promising Candidate for Next‐Generation X‐Ray Detectors

Abstract

In the past decade, metal halide perovskite (HP) has become a superstar semiconductor material due to its great application potential in the photovoltaic and photoelectric fields. In fact, HP initially attracted worldwide attention because of its excellent photovoltaic efficiency. However, HP and its derivatives also show great promise in X-ray detection due to their strong X-ray absorption, high bulk resistivity, suitable optical bandgap, and compatibility with integrated circuits. In this review, the basic working principles and modes of both the direct-type and the indirect-type X-ray detectors are first summarized before discussing the applicability of HP for these two types of detection based on the pros and cons of different perovskites. Furthermore, the authors expand their view to different preparation methods developed for HP including single crystals and polycrystalline materials. Upon systematically analyzing their potential for X-ray detection and photoelectronic characteristics on the basis of different structures and dimensions (0D, 2D, and 3D), recent progress of HPs (mainly polycrystalline) applied to flexible X-ray detection are reviewed, and their practicability and feasibility are discussed. Finally, by reviewing the current research on HP-based X-ray detection, the challenges in this field are identified, and the main directions and prospects of future research are suggested.

Phase evolution and fluorescence stability of CsPb2Br5 microwires and their application in stable and sensitive photodetectors

“…The main advantage of photoconductive type photodetectors is that the fabrication process is simple and the internal photoelectron gain is high. 67,68 To characterize the optoelectronic properties of CsPb 2 Br 5 microwires, an ohmic-contact type photodetector was prepared (Fig. S6b, ESI †).…”

“…The main advantage of photoconductive type photodetectors is that the fabrication process is simple and the internal photoelectron gain is high. 67,68…”

Switchable biexcitons in perovskite-like RbCu2Br3 crystals driven by thermally induced phase transition

“…In recent years, metal halide perovskites (ABX 3 , A: small cations; B: metal cations; and X: Cl, Br, and I) (MHPs) have attracted much attention in the fields of photodetectors, lightemitting diodes and ionizing radiation detection because of their outstanding optoelectronic properties, [1][2][3][4][5] such as high absorption efficiency with a wide spectral range, high defect tolerance, adjustable luminescent band gaps, high photoluminescence quantum yield (PLQY), low cost and simple synthesis methods. [6][7][8][9][10] Among these MHPs, lead-containing organic and inorganic halides such as CsPbX 3 , MAPbX 3 , PEAPbX 3 , and FAPbX 3 (MA: CH 3 NH 3 + ; PEA: C 6 H 5 CH 2 CH 2 NH 3 + ; and FA: NH 2 CHQNH 2 + ) have outstanding performance, and are categorized as the most promising optoelectronic materials. [11][12][13] However, the environmental concerns posed by lead toxicity make them unsatisfactory for commercial applications, which has given rise endless research on how to replace B-site cations with Sn 2+ , Bi 3+ , Sb 3+ , and Ge 2+ .…”

Halide perovskites for sensitive, stable and scalable X-ray detection and imaging

“…[8][9][10][11] Halide perovskites, which have a similar structure to traditional inorganic ABO 3 -type perovskites, have been shown to be promising candidates for use in photovoltaics, photodetection, X-ray detection, and other applications due to their excellent photoelectric properties and carrier transportation. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] Compared to traditional materials such as a-Se and CZT, halide perovskites have high defect tolerance, thanks to their unique octahedral structure, which allows for adjustment of their composition and structure as needed. Currently, hundreds of novel perovskite materials with different compositions and structural dimensions are reported, providing a rich platform for material property adjustment.…”