Halide Perovskite Lateral Heterostructures for Energy Routing Based Photonic Applications

Abstract

Semiconductor heterostructures hold the promise for developing novel integrated devices with on‐demand photonic and optoelectronic properties. Herein, the perovskite lateral heterostructures in forms of microplates and microwires are fabricated by precise control of two‐step atmospheric pressure chemical vapor deposition course and the unique optical properties are demonstrated for the first time. The comprehensive spectroscopic and elemental mapping characterizations reveal the core‐shell‐like configuration of the individual heterostructure, which features the fascinating energy routing nature. Taking advantage of the effective photon recycling and the energy transfer processes, the record‐low threshold (≈3.5 µJ cm−2) lasing and the indirect pumping induced lasers from the single micro‐heterostructure are demonstrated. Moreover, the distinctive optical waveguides with propagation length independent output spectra from the microwire heterostructure are realized. These findings represent a significant advance in developing novel and functional optoelectronic devices by engineering the perovskite heterostructure.

Advances in Perovskite Light-Emitting Diodes Possessing Improved Lifetime

“…For example, Zeng et al used a recyclable treatment on perovskites with hexane/ethyl acetate mixed solvent to balance surface passivation and charge injection, achieving a 50-fold EQE improvement (up to 6.27%) via ligand density control [134]. Then, they reported a room-temperature triple-ligand surface engineering strategy to play the synergistic role of short ligands of tetraoctylammonium bromide (TOAB), didodecyldimethylammonium bromide (DDAB), and octanoic acid (OTAc) toward perovskites with a high PLQY of >90%, unity radiative decay in its intrinsic channel, stable ink, and effective charge injection/transportation, leading to PeLEDs with a peak EQE of 11.6% and PE of 44.65 lm W −1 , which were the most efficient PeLEDs with colloidal CsPbBr 3 QDs at that time [135]. Bakr et al developed a postsynthesis passivation process by using a bidentate ligand (i.e., 2,2 -iminodibenzoic acid) for the high chemical and phase stabilities of CsPbI 3 nanocrystals, obtaining red PeLEDs with a maximum EQE of 5.02% [136].…”

“…EQE of 11.6% and PE of 44.65 lm W −1 , which were the most efficient PeLEDs with colloidal CsPbBr3 QDs at that time [135]. Bakr et al developed a postsynthesis passivation process by using a bidentate ligand (i.e., 2,2′-iminodibenzoic acid) for the high chemical and phase stabilities of CsPbI3 nanocrystals, obtaining red PeLEDs with a maximum EQE of 5.02% [136].…”

Fabrication Strategies and Optoelectronic Applications of Perovskite Heterostructures

“…prepared the CsPbCl x Br 3‐ x /CsPbBr 3 lateral PPHSs with unique optical properties for the first time by precisely controlling the two‐step atmospheric pressure CVD course. [ 89 ] The pure CsPbCl 3 microplates were firstly fabricated. Then, the CsPbBr 3 were formed at the edges of rectangular CsPbCl 3 domains since the edge of CsPbCl 3 can serve as nucleation sites.…”

“…Reproduced with permission. [ 89 ] Copyright 2020, Wiley‐VCH. h) The structure diagram of CsPbBr 3 /Cs 4 PbBr 6 PPHS nanocrystals.…”

Controllable Perovskite Single Crystal Heterojunction for Stable Self‐Powered Photo‐Imaging and X‐Ray Detection

“…[1][2][3][4] Developing new kinds of semiconductor heterostructures with novel optoelectronic features is always pursued with regard to meeting the rising demand for devices with functionalization, intelligence, and miniaturization. [5,6] Especially for the detectors based on heterostructure, they have many unique advantages, such as suppressing the dark current to improve sensitivity owing to the diode structure, integrating the optical absorption features of two materials, [7,8] and enabling photovoltaic effect for enhancing collection efficiency of photo-generated carriers stemmed from the strong built-in electric field, which will realize self-powered detection. [9][10][11][12] So far, it has been seen that the advance in heterostructure technology results in the much-improved performance and new functionalities in heterojunction detectors.…”