2015
DOI: 10.1039/c4ta05033a
|View full text |Cite
|
Sign up to set email alerts
|

Halide perovskite materials for solar cells: a theoretical review

Abstract: First-principles calculations help to understand the fundamental mechanisms of the emerging perovskite solar cells and guide further developments.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

47
931
0
5

Year Published

2016
2016
2021
2021

Publication Types

Select...
5
2

Relationship

1
6

Authors

Journals

citations
Cited by 1,232 publications
(983 citation statements)
references
References 137 publications
(190 reference statements)
47
931
0
5
Order By: Relevance
“…Taking Cs 2 InSbCl 6 and Cs 2 InBiCl 6 as instances, the easily formed p-type defects V Sb/Bi and V In are expected to be shallow by consideration of the anti-bonding (between In + /Bi 3+ -s and Cl-p orbitals) feature of valence bands; the most likely n-type defects Cs i and V Cl might be shallow as well due to rather strong ionic bonding of this family of materials. 25 Finally, we note that two best-of-class compounds Cs 2 InSbCl 6 and Cs 2 InBiCl 6 are distinct in structure, electronic and optoelectronic properties from other Bi-containing perovskites such as MA 3 Bi 2 I 9 and Cs 3 Bi 2 I 9 82 . MA 3 Bi 2 I 9 /Cs 3 Bi 2 I 9 has a crystal structure composed of isolated face-shared BiI 6 octahedra, different with the standard perovskite structure of MAPbI 3 formed in three-dimensional corner-shared PbI 6 octahedra framework.…”
Section: Combinatory Materials Screening Of Potentially Highphotovoltmentioning
confidence: 99%
See 3 more Smart Citations
“…Taking Cs 2 InSbCl 6 and Cs 2 InBiCl 6 as instances, the easily formed p-type defects V Sb/Bi and V In are expected to be shallow by consideration of the anti-bonding (between In + /Bi 3+ -s and Cl-p orbitals) feature of valence bands; the most likely n-type defects Cs i and V Cl might be shallow as well due to rather strong ionic bonding of this family of materials. 25 Finally, we note that two best-of-class compounds Cs 2 InSbCl 6 and Cs 2 InBiCl 6 are distinct in structure, electronic and optoelectronic properties from other Bi-containing perovskites such as MA 3 Bi 2 I 9 and Cs 3 Bi 2 I 9 82 . MA 3 Bi 2 I 9 /Cs 3 Bi 2 I 9 has a crystal structure composed of isolated face-shared BiI 6 octahedra, different with the standard perovskite structure of MAPbI 3 formed in three-dimensional corner-shared PbI 6 octahedra framework.…”
Section: Combinatory Materials Screening Of Potentially Highphotovoltmentioning
confidence: 99%
“…[25][26][27][28][29] This is responsible for its bipolar conducting property and long carrier diffusion length (owing to absence of charge trapping centers). Because the M 3+ ion in A 2 M + M 3+ X VII 6 adopts the Sb 3+ /Bi 3+ that have the same electron configuration (ns 2 ) with Sn 2+ /Pb 2+ , it is reasonably conjectured that similar defect-tolerant feature might be to some extent at play here.…”
Section: Combinatory Materials Screening Of Potentially Highphotovoltmentioning
confidence: 99%
See 2 more Smart Citations
“…8 The ionic radii of the Cl − , Br − , I − ions are 1.67, 1.84, and 2.07 Å, respectively. 9 In addition to this, the variation of the halide ion in perovskite matrix would strongly affect its structural and optical properties. For the third-generation photovoltaic applications, cesium-based tin perovskites (CsSnI 3 ) were effectively utilized for the solid-state dye-sensitized solar cells.…”
Section: Introductionmentioning
confidence: 99%