Hall effect and electronic structure of films

Schneider, H.; Vidal, E. Vilanova; Chadov, Stanislav; Fecher, Gerhard H.; Felser, Claudia; Jakob, G.

doi:10.1016/j.jmmm.2009.09.048

Cited by 17 publications

(16 citation statements)

References 33 publications

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“…A particularly revealing phenomenon, and therefore an important tool, is the Hall effect, whose ordinary and anomalous contributions contain terms sensitive to the details of the Fermi surface. 12,13 Indeed, it has been theoretically shown that Co 2 MnAl may exhibit a fully spin-polarized Hall current despite its only partially spin-polarized band structure. 14 Therefore, this study includes measurements of the magnetoresistance (MR) and the Hall resistivity of bulk polycrystalline Co 2 MnSi 1-x Al x (x ¼ 0, 0.25, 0.5, 0.75, and 1) as a function of temperature and applied magnetic field.…”

mentioning

confidence: 99%

Hall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys

Prestigiacomo

Young

Adams

et al. 2014

Journal of Applied Physics

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mentioning

confidence: 99%

Hall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys

Prestigiacomo

Young

Adams

et al. 2014

Journal of Applied Physics

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“…They calculated that doping CTS with 10% vanadium in the Ti site would bring the Weyl points to the Fermi level while keeping the main band topology unchanged. This suggestion is also based on the results for the hyperfine fields on a series of Co 2 Ti 1−x V x Sn samples, where it was found that increasing the conduction electron density in CTS for x < 0.6 slightly increases the positive Sn hyperfine field (with a weak maximum at x = 0.4), [124] Copyright 2010, ElsevierB.V. c) Hall resistance of MgO/CMFS/Pd trilayers with different CMFS thickness.…”

Section: Hall (And Related) Effectsmentioning

confidence: 77%

Spin‐Dependent Thermoelectric Transport in Cobalt‐Based Heusler Alloys

Granville

2020

Annalen der Physik

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Sitting at the intersection of spintronics and thermoelectricity, research investigating the coupling of thermoelectric, magnetic, and electrical transport properties in materials has recently found that the ferromagnetic Heusler alloys are the ideal testbeds. These materials have attracted a lot of attention due to their useful magnetotransport properties and the possibility of tailoring these properties by modifying their composition or producing heterostructures. With the diverse range of interesting phenomena in the Heusler alloys, ferromagnetic Heusler alloys are also ideal candidates for engineering spin caloritronic devices that can take advantage of the interplay of the physics of heat flow, magnetism, and electric potential. The fundamental physical concepts important to spin-dependent thermoelectrics research are introduced and recent studies of several ferromagnetic Heusler compounds are reviewed, highlighting some exceptional latest experiments on half-metallic Co 2 TiSn and the ferromagnetic Weyl semimetal Co 2 MnGa. Furthermore, the potential to generate useful magnetothermoelectric voltages in electronic devices based on the anomalous Nernst effect is discussed.

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“…Alloying with Fe on the Mn sublattice shifts the Fermi energy in Co 2 MnSi upward, which brings the Fermi level closer to the middle of the half-metallic gap, which is expected to be favorable for applications [17][18][19][20]. In addition, alloying with Fe increases T C which is also favorable; in fact, Co 2 FeSi has the highest T C of any Heusler alloy [34].…”

Section: Co2mn1−xfexsi and (Co1−xfex)2mnsi Alloysmentioning

confidence: 99%

“…The spin polarization of a half-metal is expected to be more robust if the Fermi level lies close to the middle of the half-metallic gap. Because the Fermi level in Co 2 MnSi lies closer to the VBM [8,15,16], partial substitution of Fe for Mn was explored as a way to shift the Fermi level upward and enhance the magnetoresistive effects [17][18][19][20]. However, first-principles calculations, in-cluding those in the GW approximation [8], show that the band structures of Co 2 MnSi and Co 2 FeSi differ by more than a rigid band shift.…”

Section: Introductionmentioning

confidence: 99%

Effects of intrinsic defects and alloying with Fe on the half-metallicity of Co2MnSi

Журавлев

Belashchenko

2020

Phys. Rev. Materials

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The electronic structure and half-metallic gap of Co2MnSi in the presence of crystallographic defects, partial Fe substitution for Mn, and thermal spin fluctuations are studied using the coherent potential approximation and the disordered local moment method. In the presence of 5% Co or Mn vacancies the Fermi level shifts down to the minority-spin valence-band maximum. In contrast to NiMnSb, both types of Mn antisite defects in Co2MnSi are strongly exchange-coupled to the host magnetization, and thermal spin fluctuations do not strongly affect the half-metallic gap. Partial substitution of Mn by Fe results in considerable changes in the Bloch spectral function near the Fermi level, which strongly deviate from the rigid-band picture. In particular, a light band with the Fe character crosses the Fermi level at about 50% concentration. At room temperature, Fe substitution of up to 30% slightly increases the spin polarization at the Fermi level.

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Hall effect and electronic structure of films

Cited by 17 publications

References 33 publications

Hall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys

Hall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys

Spin‐Dependent Thermoelectric Transport in Cobalt‐Based Heusler Alloys

Effects of intrinsic defects and alloying with Fe on the half-metallicity of Co2MnSi

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