1957
DOI: 10.1063/1.1722860
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Hall Effect and Ferromagnetism of Very Thin Nickel Films

Abstract: Hall effect measurements have been used to determine the two Hall constants and the magnetic properties of nickel films less than 100 A thick at room temperature. The extraordinary Hall constant R1 is found to be very much larger than in bulk nickel. In the thicker films, R1 shows the resistivity dependence predicted by Karplus and Luttinger. For the thinner films, the deviation of the measured initial Hall slope from the value thus predicted is taken as a measure of the hardness of magnetization in the direct… Show more

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Cited by 35 publications
(7 citation statements)
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“…Following the previous discussion, that would mean that the side jump is the dominant mechanism of the extraordinary Hall effect. Coren and Juretschke, 23 Pichard et al, 24 and Schad et al 25 have drawn this conclusion from similar experimental results on thin Ni and Fe films. However, the high-resistivity ͑thin͒ samples deviate strongly from the linear variation and do not support this scenario.…”
Section: Resultsmentioning
confidence: 74%
“…Following the previous discussion, that would mean that the side jump is the dominant mechanism of the extraordinary Hall effect. Coren and Juretschke, 23 Pichard et al, 24 and Schad et al 25 have drawn this conclusion from similar experimental results on thin Ni and Fe films. However, the high-resistivity ͑thin͒ samples deviate strongly from the linear variation and do not support this scenario.…”
Section: Resultsmentioning
confidence: 74%
“…They are of interest mainly to relate the amplitude HI to that of the incident radiation. If the propagation constant in this region is ko, and the inequalities apply to ko as well as to kl' this relation is HI cosklD (11) The foregoing fields have been assumed to be entirely transverse and at normal incidence. Neither condition is met in most guided waves, but it can be corrected for.…”
Section: Zero-order Field Configurationmentioning
confidence: 99%
“…Two models are usually mentioned in this context. 5 Despite the theoretical challenges, the effect has been used as a tool in experimental studies of ferromagnetic semiconductors, 7 ultrathin magnetic films, 8 and nanoscopic clusters. 2 Lateral displacement known as "side jump" model, 3 is believed to be responsible for the effect in ferromagnets with a short mean free path and, therefore high resistivity.…”
Section: Introductionmentioning
confidence: 99%