Hall Effect and Resistivity in Epitaxial MnSi Thin Films Under Ambient and High Pressure

Menzel, D.; Schroeter, David; Steinki, N.; Süllow, S.; Scarioni, Alexander Fernández; Schumacher, H. W.; Okuyama, Hiroaki; Hidaka, Hisao

doi:10.1109/tmag.2018.2864095

Cited by 5 publications

(5 citation statements)

References 25 publications

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“…The growth of MnSi films has been well described in previous reports with various methods [2,9,[21][22][23][24][25]. However, most techniques to grow MnSi require specific facilities with an ultrahigh vacuum environment, while development of conventional magnetron sputtering with a relatively low base pressure has not yet been introduced.…”

Section: Resultsmentioning

confidence: 99%

“…Such microscopic tools allow direct identification of the skyrmionic lattice in real-space, but high-quality single crystals or epitaxial thin films are needed, which are grown by special instruments with a high-vacuum chamber. The other way to reveal the existence of skyrmions is to measure the magnetotransport properties and the topological Hall effect (THE), as shown in previous reports [9,[19][20][21]. Skyrmions can be observed even in polycrystalline samples because they are topological objects in which the topological phase is less susceptible to impurities or crystalline nature [22].…”

Section: Introductionmentioning

confidence: 99%

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Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

et al. 2021

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Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

et al. 2021

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“…The growth of MnSi lms have been well described in previous reports with various methods. 2,9,[21][22][23][24][25] However, most techniques to grow MnSi required speci c facilities with an ultrahigh vacuum environment, while development for conventional magnetron sputtering with relatively low base pressure is not introduced yet. Since the lattice mismatch between Si (001) substrate and cubic MnSi structure is estimated to be around 19%, we have tested to nd optimal growth conditions of the MnSi lms on Si (001) substrates.…”

Section: Resultsmentioning

confidence: 99%

“…The other way to reveal the existence of skyrmions is considered to measure magnetotransport properties, topological Hall effect (THE), as shown in previous reports. 9,[19][20][21] The skyrmion can be observed even in polycrystalline samples because of being a topological object, 22 in which topological phase is less susceptible to impurities or crystalline nature.…”

Section: Introductionmentioning

confidence: 99%

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Choi

Bang

Chun

et al. 2020

Preprint

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Topologically protected chiral skyrmion is an intriguing spin texture, which has attracted much attention because of fundamental research and future spintronic applications. MnSi with the non-centrosymmetric structure is well-known material hosting skyrmion phase. To date, preparation of MnSi crystals has been investigated by using special instruments with ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although as-grown MnSi films have polycrystalline nature, the stable skyrmion phase in a broad range of temperatures and magnetic fields is observed by magnetotransport properties including phenomenological scaling analysis of Hall resistivities contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phase, but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.

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“…[54,55] as a medium for magnetic topological defects like skyrmions. Thin films of MnSi, having a strong in-plane magnetic anisotropy, host only a magnetic spiral order with Q perpendicular to the film plane [56]. The T c control in superconducting bilayers based on them, may be performed by a reversible uniform magnetization of the films in an external magnetic field.…”

Section: Introductionmentioning

confidence: 99%

Superconducting spin valve under magnonic control

Pugach¹,

Сафончик²,

Belotelov³

et al. 2021

Preprint

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The detailed investigation of a superconducting spin-triplet valve is presented. This spin valve consists of a superconducting film covering a metal with intrinsic spiral magnetic order, which may be the result of a competitive exchange or of an asymmetric Dzyaloshinsky-Moriya exchange following from the central symmetry breaking of the crystal lattice. Depending on the anisotropy, this metal may change its magnetization either from a spiral to uniform order, as in Ho and Er, or in the direction of the spiral itself, as in B20 family crystals. Very recently, a new way of controlling the superconducting spin valve has been developed: the change of the magnetic order may also be triggered by magnonic relaxation processes, thus merging superconducting spintronics and magnonics. The nonuniform magnetic order controls the appearance of long-range triplet superconducting correlations (LRTC), which change the conditions of the proximity effect, enabling an external magnetic control of the superconducting critical temperature. We show that magnetic control of the spin-valve behavior can also be obtained for moderately low exchange energies thanks to an orientation-dependent averaging mechanism of the magnetic inhomogeneity on the scale of the Cooper pairs. The competition between these two mechanisms yields different behaviors of the spin-valve effect. Our numerical calculations show that at low exchange fields (as in MnSi) the spin valve effect may be quite significant. They suggest the switching behavior of the superconducting spin valve to be better optimized for B20 family compounds allowing magnonic control.

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Hall Effect and Resistivity in Epitaxial MnSi Thin Films Under Ambient and High Pressure

Cited by 5 publications

References 25 publications

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Superconducting spin valve under magnonic control

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Hall Effect and Resistivity in Epitaxial MnSi Thin Films Under Ambient and High Pressure

Cited by 5 publications

References 25 publications

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Skyrmion Phase in MnSi&nbsp;Thin Films Grown on Sapphire by a Conventional Sputtering

Superconducting spin valve under magnonic control

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Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering