Hall effect in hopping regime

Avdonin, A.; Skupiński, P.; Grasza, K.

doi:10.1016/j.physb.2015.12.024

Cited by 20 publications

(15 citation statements)

References 8 publications

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“…Furthermore, in general, the Hall effect for hopping conduction is not well understood yet. While the Hall effect for free‐carrier conduction is caused by the classical Lorenz force, that for hopping conduction is due to the self‐interference effect of the electron wave function between the paths for two‐site and three‐site hopping, as has been shown firstly by Holstein, then by Németh and Mühlschlegel as well as by Galperin et al, and most recently by Avdonin et al While the calculation method of the Hall factor for free‐carrier conduction has been established on the basis of relaxation‐time approximation, that for hopping conduction has not been established yet. It is, therefore, necessary to compare the theoretically calculated results with the experimental results of Hall‐effect measurements.…”

Section: Introductionmentioning

confidence: 99%

Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs

Kajikawa

2018

Physica Status Solidi (b)

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A Hubbard-band model is used for analyzing the low-temperature data of Hall-effect measurements on weakly compensated n-GaAs samples with donor concentrations N D less than 10 16 cm À3 . In the model, not only the bottom Hubbard band formed from the neutral donor states but also the top Hubbard band formed from the negatively charged donor states is taken into account. Nearest-neighbor hopping (NNH) or Efros-Shklovskii (ES) variablerange hopping (VRH) is assumed for conduction in the bottom Hubbard band, depending on N D , while NNH is assumed for conduction in the top Hubbard band. For the sample with N D ¼ 1.3 Â 10 15 cm À3 , it is shown that the Hall mobility is dominated by NNH in the top Hubbard band in the temperature range of 4-15 K while it is dominated by NNH in the bottom Hubbard band below 3 K. For this sample, it is also shown that the absolute value of the Hall coefficient is dominated by the contribution from the top Hubbard band around its peak at 4.4 K. For the samples with N D in the range of 2.7-9 Â 10 15 cm À3 , on the other hand, it is shown that there hardly exists the temperature range in which the conduction in the top Hubbard band dominates.

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Section: Introductionmentioning

confidence: 99%

Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs

Kajikawa

2018

Physica Status Solidi (b)

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“…A fact that high density of free holes (p > 0.8 × 10 20 cm -3 ) in the crystalline state estimated from the Hall effect measurements (at 300 K) indicates that the transport is dominated by free carriers. If, on the other hand, the states are localized, such a large p should not be obtained from the Hall measurements, i.e., hopping of localized carriers does not produce such a large p (Avdonin et al 2016;Mott 1993;Mott, Davis 1979).…”

Section: Metal-insulator Transitionmentioning

confidence: 99%

Comments on the electronic transport mechanisms in the crystalline state of Ge—Sb—Te phase-change materials

Shimakawa¹,

Freitas

2021

Physics of Complex Systems

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It is known that phase-change materials, such as Ge-Sb-Te ternary system, are promising resistive non-volatile random-access memory applications with ultra-rapid reversible transformations between the crystalline and amorphous phases. This class of electronic transition is categorized to be the metal-insulator transition (MIT). The Anderson-type MIT has been discussed extensively in phase-change materials (PCMs) and isothermal annealing of amorphous PCMs (a-PCMs) which, above a certain temperature, leads to the metallic (crystalline) phase. In the insulator regime near the MI transition, Mott-type variable-range hopping (VRH) and/or Efros-Shkolvskii hopping (ESH) at low temperatures below 20 K (and down to 1 K) in Ge 1 Sb 2 Te 4 (GST124) have been discussed extensively, however, we criticize the above argument through a detailed discussion of physical parameters that support the VRH mechanism. It is not clear whether or not the density-of-states (DOS) near the Fermi level is localized (like the Fermi glass) in the crystalline phase. It is also suggested that grain boundaries are expected to interfere with the electronic transport in the crystalline state. We should take into account the grain boundary effects on the electronic transport in the crystalline phase of Ge-Sb-Te system.

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“…We should note that we also calculated T j and l j for the experimental data 84 on a ZnO crystal, containing processrelated donors with the concentration N % 6.6 Â 10 18 cm À3 , compensation ratio K % 0.2, and thermal ionization energy I d % 18.3 meV. According to the experiment: l H (T j ) ¼ 73 cm 2 / (V s) at T j ¼ 95 K. The calculation using Eq.…”

Section: Drift Mobility Of V-band Holes In the Regime Of Their Jumping (Turbulent Relay) Migration Via Acceptorsmentioning

confidence: 99%

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

Poklonski

Вырко

Poklonskaya

et al. 2016

Journal of Applied Physics

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A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulatormetal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature T j is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K % 0.15 and temperature T j , the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3T j /2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to T j hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (À1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the range from 3 Â 10 17 to 3 Â 10 20 cm À3 , i.e., up to the Mott transition. The model uses no fitting parameters. Published by AIP Publishing.

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Hall effect in hopping regime

Cited by 20 publications

References 8 publications

Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs

Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs

Comments on the electronic transport mechanisms in the crystalline state of Ge—Sb—Te phase-change materials

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

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