2008
DOI: 10.1103/physrevb.78.085105
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Hall effect on the triangular lattice

Abstract: We investigate the high-frequency Hall effect on a two-dimensional triangular lattice with nearest-neighbor hopping and a local Hubbard interaction. The complete temperature and doping dependencies of the highfrequency Hall coefficient R H are evaluated analytically and numerically for small, intermediate, and strong interactions using various approximation schemes. We find that R H follows the semiclassical 1 / qn ‫ء‬ law near T = 0 but exhibits a striking T-linear behavior with an interaction-and doping-depe… Show more

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Cited by 10 publications
(8 citation statements)
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References 31 publications
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“…Compared to a classical material, R H exhibits a strong T dependence in the whole T range, with a linear behavior at high T . This characteristic shape has also been observed in Na x CoO 2 36 and different models developed for a triangular lattice can reproduce the high T linear dependence 37–39. The importance of the triangular lattice geometry being at the origin of this linear behavior is emphasized in Ref.…”
Section: Hall Effect As a Probe Of The Thermoelectric Properties Insupporting
confidence: 54%
“…Compared to a classical material, R H exhibits a strong T dependence in the whole T range, with a linear behavior at high T . This characteristic shape has also been observed in Na x CoO 2 36 and different models developed for a triangular lattice can reproduce the high T linear dependence 37–39. The importance of the triangular lattice geometry being at the origin of this linear behavior is emphasized in Ref.…”
Section: Hall Effect As a Probe Of The Thermoelectric Properties Insupporting
confidence: 54%
“…This behavior was clearly noticed even up to much higher T in the initial experiments on a given sample (28). Such a linear increase of the Hall effect has indeed been suggested to be a specific behavior for a uniformly doped triangular metallic lattice, whatever the doping and the EC strength (29) (30). The present results do support quite generally this theoretical suggestion.…”
Section: Comparison Of Transport Properties Of Different Phasessupporting
confidence: 88%
“…39 They reported a Hall coefficient of 12.5 Â 10 À3 cm 3 C À1 at room temperature for an epitaxial thin film sample -similar to our results for d % 0 -combined with a strong temperature dependency of R H , which cannot be explained within the simple Drude picture. In order to obtain a meaningful estimate for the charge carrier concentration via the classical relation R H ¼ 1/ne, Eng et al extrapolated their low temperature (T < 100 K) data, where the influence of electronic correlations on the Hall coefficient is negligible, 41,42 to high temperatures. They obtained an estimate for the ordinary Hall coefficient of R H ¼ 2.6 Â 10 À3 cm 3 C À1 , corresponding to a hole concentration of 0.36 per formula unit.…”
Section: Resultsmentioning
confidence: 99%