Hall Effect Studies of AlGaAs Grown by Liquid-Phase Epitaxy for Tandem Solar Cell Applications

Zhao, Xin; Montgomery, Kyle H.; Woodall, J. M.

doi:10.1007/s11664-014-3340-x

Cited by 7 publications

(5 citation statements)

References 22 publications

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“…Table 3 presents the data for tin doping, where the results for LPE are collected [ 7 , 27 ]. For Hall measurements the n -AlGaAs layers (x=0.2–0.24) were grown by the LPE technique with saturation at 900 °C in a piston graphite boat on the semi-insulating GaAs substrate.…”

Section: Resultsmentioning

confidence: 99%

“… melt x Bi , % x Sn , % n, cm −3 T growth , o C Ref. Ga 0 0 p-type 850 [ 27 ] Ga 0 0 p-type 900 data of this work Ga–Bi 10 0 (2–3)·10 16 900 data of this work Ga 0 15 (5–6)·10 17 800 [ 7 ] Ga 0 15 (2–3)·10 17 850 [ 27 ] Ga–Bi 10 15 9·10 17 900 data of this work …”

Section: Resultsmentioning

confidence: 99%

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Estimation of interaction parameters in the Al-Ga-As-Sn-Bi system

Khvostikov¹,

Khvostikova²,

Potapovich³

et al. 2023

Heliyon

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Estimation of interaction parameters in the Al-Ga-As-Sn-Bi system

Khvostikov¹,

Khvostikova²,

Potapovich³

et al. 2023

Heliyon

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“…LPE is a process for growing thin epitaxial layers on a crystalline substrate from an oversaturated solution, and this technology is often used in the III-V solar cells. 45,46 VHF-GD is a deposition technology to prepare microcrystalline silicon at high growth rate. The process of glow discharge determines the structure and the properties of microcrystalline silicon.…”

Section: Research Themesmentioning

confidence: 99%

Hotspots, frontiers, and emerging trends of tandem solar cell research: A comprehensive review

Yang

Lin

et al. 2021

Intl J of Energy Research

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A tandem solar cell (TSC) is a kind of special photovoltaic (PV) device with two or further sub-cells stacked in it. On the basis of Web of Science database and CiteSpace software, the literature about TSC research from 2000 to 2019 is reviewed. The top 10 hotspots are deduced (efficiency, performance, film, silicon, design, open circuit voltage, polymer, morphology, oxide, and growth), yielding prominence of the primary roles of devices and materials in PV research. The top 10 research clusters are analyzed (organic compounds, polymer solar cells, perovskite, non-fullerene acceptors, silicon, high frequency-glow discharge, solution process, light trapping, liquid phase epitaxy, and water splitting), revealing the development orientation of TSC research. High co-citation, strong burst citation, and representative frontier literature are highlighted. Five evolution trends/clusters are examined. Organic solar cells are the mainstream of TSC research and are gradually replaced by the emerging trend of non-fullerenes. Perovskite solar cells are a typical emerging trend, which rejuvenates the traditional silicon solar cells. This review provides a visual panorama of TSC research over the past two decades.

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“…The probability of background doping increases at high temperatures. For example, undoped AlGaAs layers grown from a Ga melt at T = 850 °C reveal p-type conductivity with a concentration of (4–5)∙10 16 cm −3 13 . The problem of conductivity type inversion (from n to p- type) is observed for undoped GaAs grown at T > 850 °C from a Ga melt 14 , 15 .…”

Section: Introductionmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

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Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga–Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga–Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

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Hall Effect Studies of AlGaAs Grown by Liquid-Phase Epitaxy for Tandem Solar Cell Applications

Cited by 7 publications

References 22 publications

Estimation of interaction parameters in the Al-Ga-As-Sn-Bi system

Estimation of interaction parameters in the Al-Ga-As-Sn-Bi system

Hotspots, frontiers, and emerging trends of tandem solar cell research: A comprehensive review

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

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