Hall mobility of reduced rutile in the temperature range 300–1250°K

Bransky, I.; Tannhauser, D. S.

doi:10.1016/0038-1098(69)90735-2

Cited by 18 publications

(18 citation statements)

References 16 publications

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“…There have been a number of defect models reported in the literature, which are based on oxygen partial pressure. − , However, as seen from Figure , the values of oxygen partial pressure may differ from oxygen activity. Therefore, the defect disorder models derived from the dependence of electrical properties vs oxygen partial pressure must be considered as tentative models, which require a verification.…”

Section: Discussionmentioning

confidence: 99%

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Charge Transport in Cr-Doped Titanium Dioxide

et al. 2008

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The present work reports the effect of chromium on the mobility terms for electrons and electron holes for TiO 2 at 1273 K. These data were determined by using the concentration data from the defect disorder diagram derived by the authors and the electrical conductivity data for Cr-doped TiO 2 reported by Carpentier et al. [J. Phys. Chem. Solids 1989, 50, 145]. It is shown that chromium incorporates into the TiO 2 lattice according to two different mechanism depending on chromium concentration. In the concentration range 1-3 atom %, chromium incorporation leads to the formation of acceptors, which are compensated by tri-valent titanium interstitials. However, in the range 4-5 atom %, the acceptor-type defects formed by chromium incorporated in the titanium sites are compensated by oxygen vacancies. The incorporation of chromium results in a relatively insignificant increase of the mobility of electrons from µ n ) 0.5 × 10 -5 m 2 V -1 s -1 for undoped TiO 2 to µ n ) 1.3 × 10 -5 m 2 V -1 s -1 . The incorporation of Cr results in a drop of the mobility of electron holes from µ p ) 2.95 × 10 -5 m 2 V -1 s -1 for undoped TiO 2 to µ p ) 0.6 × 10 -5 m 2 V -1 s -1 for Cr-doped TiO 2 . The observed mobility changes are considered in terms of the Cr-induced structural changes of the TiO 2 lattice. † The present work was performed within the research and development program on solar-hydrogen.

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Section: Discussionmentioning

confidence: 99%

“…A number of studies have been reported on electrical properties of TiO 2 , which are mainly based on the measurements of electrical conductivity. − These data are then considered in terms of defect disorder models…”

Section: Introductionmentioning

confidence: 99%

Charge Transport in Cr-Doped Titanium Dioxide

et al. 2008

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“…11. However, their interpretation required that the mobility of electrons in TiO2 be the order of 105 cm2/V-sec, which is much greater than the measured values of 10 -1 cm2/V-sec (18). It is noted that the data can be characterized by three distinct regions.…”

Section: [3]mentioning

confidence: 95%

“…Various high-and low-temperature measurements including conductivity (1)(2)(3)(4)(5)(6), weight change (7,8), thermoelectric power (3,4), diffusion (9)(10)(11), transient conductivity (12)(13)(14), Hall effect (15)(16)(17)(18)(19)(20), and dielectric measurements (21)(22)(23)(24)(25)(26) have been made for the purpose of elucidating its defect structure and physical properties. Various high-and low-temperature measurements including conductivity (1)(2)(3)(4)(5)(6), weight change (7,8), thermoelectric power (3,4), diffusion (9)(10)(11), transient conductivity (12)(13)(14), Hall effect (15)(16)(17)(18)…”

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confidence: 99%

High-Temperature Dielectric Behavior of TiO[sub 2](Rutile)

Seitz

McSweeney

Hirthe

1973

J. Electrochem. Soc.

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The dielectric behavior of "a" and "c" orientation single crystals of TiO2 (rutile) was investigated as a function of frequency, from 100 Hz to 500 kHz, and temperature, over the interval from 500 ~ to 1000~ The a-c conductivity at low applied voltages was found to be due to electronic carriers throughout the frequency and temperature range studied. The dielectric polarization processes occurring in this material were found to depend on the temperature and frequency ranges being investigated. At frequencies above l0 s Hz, electronic and lattice polarization was found to predominate throughout the temperature interval investigated. The lower frequency data could be rationalized on the basis of a space-charge polarization model involving mobile point defects, which are blocked or partially blocked at the electrodes, and electronic carriers, which are able to pass through the electrode. At temperatures below 750~ the "c" orientation specimens were found to exhibit an anomalous behavior that was felt to be the result of a thin barrier layer in the vicinity of the specimen electrodes.

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“…Specically, the purchased rutile TiO 2 single crystal with orientation of (100) was adopted based on our previous study. 21 Unfortunately, its Hall mobility was almost impossible to measure due to the high resistivity, 22,23 which usually below 10 cm 2 V À1 s À1 at room temperature according to literatures. 24,25 Therefore, it can be reasonably inferred that the GaN epilayer exhibits signicantly higher mobility than the TiO 2 single crystal.…”

Section: Structure and Optoelectronic Properties Of The Gan Epilayermentioning

confidence: 99%