Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

“…In the first solidified fraction of the ingot, measured mobilities are significantly below those predicted by the model. These discrepancies were already observed by Veirman et al [14] in highly compensated Si suggesting the existence of a specific compensation-related scattering mechanism limiting the carrier mobility. In the ingot studied in this work, the compensation level C l =(N A +N D )/p is the highest in the first solidified fraction (C l =20 at f s =0.02 compared to C l = 6.6 at f S = 0.85) which might explain the disagreement with Arora's model in this region.…”

“…Although no data was found in the literature for r H in highly compensated Si, recent results suggest that it is only weakly dependent on the compensation level [14]. In this work, r H is thus assumed to be equal to 0.7 at room temperature for all samples, as predicted for uncompensated p-type Si with similar doping impurities concentration.…”

Investigating thermal donors in n-type Cz silicon with carrier density imaging

“…7 The TD concentration in silicon wafers can be calculated from the resistivity measured by four-point probe method before and after TD growth. 4,8 If the sample under investigation is scanned, a map of the TD concentration can be acquired. It should be mentioned that the majority carrier mobility μ has to be considered for this method.…”

Hall mobility drops in disordered boron‐doped Czochralski silicon compensated by thermal donors activation

“…The Hall factor (r H ) that relates µ Hall to the true drift mobility (µ Drift ) through µ Hall =r H ×µ Drift was assumed to be constant and equal to around 0.74 in p-Si and 1.1 in n-Si (we encourage the reader to see [7] where full details about the experiment are given). Close to FC, some samples had to be cut down to lower sizes (down to 6×6 mm²) in order to keep linear and isotropic I-V contact characteristics.…”

“…We also report a couple of measurements of µ Drift on pSi (further details in [7]). We did not report a full set of data due to the uncertainties associated with this method, along with the technical difficulty in removing the Al diodes after each annealing.…”