Handbook of SiC properties for fuel performance modeling

Snead, Lance Lewis; Nozawa, Takashi; Katoh, Yutai; Byun, Thak Sang; Kondo, Sosuke; Petti, David A.

doi:10.1016/j.jnucmat.2007.05.016

Cited by 1,193 publications

(648 citation statements)

References 187 publications

(314 reference statements)

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“…2,19,20 In the present study, quantitative results of their size and bulk number density showed a good agreement with the previous reports. The loops were identified or speculated to be of interstitial type in Ref.…”

Section: Discussionsupporting

confidence: 93%

Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC

2011

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The widths of interstitial loop denuded zone (DZ) along grain boundaries were examined for 3C-SiC irradiated at 1010-1380˚C by transmission electron microscopy in an effort to obtain the activation energy of interstitial migration. DZ widths as small as 17 nm were observed below 1130˚C, indicating that a substantial population of "TEM invisible" voids of diameter <0.7 significantly contribute to interstitial annihilation. Using the obtained loop DZ width and the matrix sink strength including the invisible voids, the activation energy of interstitial diffusion was determined to be 1.5 eV for the slower moving Si interstitial of SiC by application of simple reaction-diffusion equations.3

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Section: Discussionsupporting

confidence: 93%

Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC

2011

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“…There is a whitish band approximately 150 nm wide from the surface. The projected range of 360 keV Ag + ions in 6H-SiC with density of 3.215 g/cm 3 [13] is 110 nm and the projected range straggling 27 nm [14]. Consequently, the width of the white band corresponds to the width of the implanted layer in the SiC.…”

Section: Resultsmentioning

confidence: 99%

SEM analysis of ion implanted SiC

Malherbe

Berg

Botha

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and nonreactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag + , I + and Xe + ions were separately implanted into 6H-SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900°C to 1600°C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H-SiC wafers implanted with 360 keV Ag + ions at room temperature and at 600°C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I + ions implanted at 600°C into 6H-SiC and annealed at 1600°C. The 6H-SiC is not amorphized but remained crystalline when implanting at 600°C. There are differences in the microstructure of 6H-SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350°C does not amorphize the substrate as is the case with room temperature heavy ion bombardment. Subsequent annealing of the implanted polycrystalline samples leads to increased thermal etching effects such as grain boundary grooving. Damage due to channelling (or non-channelling) in the different crystallites resulted also in differences in thermal etching in the crystallites.

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“…Assuming randomly displaced atoms, we observed this effect in all samples. For our calculations we used a Debye temperature of Ө D = 1030 K, which is an average of the widely varying published values [11]. Furthermore lattice parameters of a = 0.3081 nm, c =1.5092 nm and an atomic density of ρ = 9.641×10 22 at cm -3 were assumed.…”

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Influence of radiation damage on diffusion of fission products in silicon carbide

Friedland

Hlatshwayo

Berg

2013

Phys. Status Solidi C

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The influence of irradiation induced damage on the transport of implanted species in poly and single crystalline silicon carbide is investigated. For this purpose published diffusion results of strontium, silver, iodine and cesium are compared with the associated evolution of defect profiles determined by α-particle channelling in a backscattering geometry. Strong diffusion takes place in the amorphized surface layer of room temperature implanted 6H-SiC during annealing at 1100 °C, which drops below the detection limit of 10 -21 m 2 s -1 as soon as re-crystallization is completed. Diffusion in samples implanted above the critical amorphization temperature is only observed when simultaneously a significant reduction of defect density occurs. No diffusion into the undamaged bulk is detected at temperatures up to 1500 °C. The observed diffusion behaviour is explained by a defect related trapping and release mechanism. Normal grain boundary diffusion of silver and iodine occurs in CVD-SiC.

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Handbook of SiC properties for fuel performance modeling

Cited by 1,193 publications

References 187 publications

Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC

Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC

SEM analysis of ion implanted SiC

Influence of radiation damage on diffusion of fission products in silicon carbide

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