Handbook of Thin Film Technology

Maissel, L. I.; Glang, R.; Budenstein, Paul P.

doi:10.1149/1.2408101

Cited by 810 publications

(569 citation statements)

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“…But a decrease of T substrate <500° C leads to a reduction of the device efficiency because of a less compact structure and the decrease of grain size. This is likely due to a lower surface mobility during the growth at lower temperatures [12] and indicates the importance of a reasonably high T substrate to maintain a sufficient quality of the absorber. So, it is expected to achieve enhanced efficiencies for solar cells on Mo combining a high T substrate (>535° C) and an optimum Cu excess during the process ((Cu/Ga)e 2 ∼1.3).…”

Section: Resultsmentioning

confidence: 99%

Effect of Cu excess on three-stage CuGaSe2 thin films using in-situ process controls

Caballero¹,

Siebentritt²,

Sakurai³

et al. 2007

Thin Solid Films

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The objective of this work is to study the effect of Cu-excess and compare the growth mechanism of CuGaSe 2 (CGS) films coevaporated using a bilayer and a three-stage process and evaluate the consequences of the latter for CGS on transparent back contacts. CGS thin films are prepared by coevaporation in a three-stage process onto Mo/soda-lime substrates and onto FTO. In contrast to the bilayer process, Cu-Se phases are only observed on the surface at the end of the second stage, e 2 . This allows to work with a broader Cu-excess window. Atomic ratios (Cu/Ga)e 2 of around 1.3 at the end of deposition phase 2 in the three-stage process show the better device efficiencies due to a larger grain formation. Increasing the Cu-content leads to a slight decrease of the grain size and voids are observed in the film, reducing the FF of the device. The CGS morphology and the solar cells efficiency are dominated by the Cu excess more than by the T substrate between 535° C and 500° C. Similar results are obtained for CGS on FTO: (Cu/Ga)e 2 ∼1.3 as best composition at T substrate =500° C.

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Section: Resultsmentioning

confidence: 99%

Effect of Cu excess on three-stage CuGaSe2 thin films using in-situ process controls

Caballero¹,

Siebentritt²,

Sakurai³

et al. 2007

Thin Solid Films

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“…The constant e is estimated using expression [12] e = n 2 where n is the refractive index of the prepared glass obtained from the optical re ectance data of each composition [13]. Table 1 lists the values of n, e, β t,s and β t,p f for each prepared composition.…”

Section: Resultsmentioning

confidence: 99%

“…Table 1 lists the values of n, e, β t,s and β t,p f for each prepared composition. The slopes m s of the curves of Figure 2 are used to obtain the experimental values of β t,s using the relation [12].…”

Section: Resultsmentioning

confidence: 99%

Electrical transport phenomenon in the lead bismuth borate glasses

2009

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Ternary system of lead-bismuth-borate glasses has been fabricated in three different compositions (PbO)x% -(Bi 2 O 3 )(50-x)% -(B 2 O 3 )50% with x = 5, 15 and 25 using the melt quench technique. The D.C. electrical transport mechanism has been discussed both in the low and high field regions. The coefficients of barrier lowering are calculated based on the Schottky and Poole-Frenkel conduction mechanisms. The refractive index and the high frequency dielectric constants for the prepared glass compositions are evaluated using the optical techniques. The observed decrease in the current level with the increase of the PbO contents is explained. The high field transport in these glasses is explained in terms of the Jonscher's modified model of the Poole-Frenkel phenomenon.

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“…22) From Eq. (2), the sputtered atoms undergo a large number of collisions when the sputtering pressure is high and have a higher probability of agglomeration.…”

Section: Effects Of Sputtering Pressure On the Properties Of Batiomentioning

confidence: 99%

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

Park¹

2014

Korean. J. Mater. Res.

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Flexible BaTiO 3 films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible BaTiO 3 films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the BaTiO 3 increased with increasing sputtering pressure. All BaTiO 3 films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the BaTiO 3 films were affected by the microstructure and roughness. The BaTiO 3 films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of 10 −8 A at 400 kV/cm. Also, films showed polarization of 8 µC/cm 2 at 100 kV/cm and remnant polarization (P r ) of 2 µC/cm 2 . This suggests that sputter deposited flexible BaTiO 3 films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

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Handbook of Thin Film Technology

Abstract: not Available.

Cited by 810 publications

References 0 publications

Effect of Cu excess on three-stage CuGaSe2 thin films using in-situ process controls

Effect of Cu excess on three-stage CuGaSe2 thin films using in-situ process controls

Electrical transport phenomenon in the lead bismuth borate glasses

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

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