Hard X-ray induced fast secondary electron cascading processes in solids

Mecseki, Katalin; Höppner, Hauke; Büscher, Martin; Tkachenko, Victor; Medvedev, Nikita; Bekx, John Jasper; Lipp, Vladimir; Piekarz, Przemysław; Windeler, Matthew K. R.; Tisch, J. W. G.; Walke, D. J.; Nakatsutsumi, M.; Prandolini, M. J.; Glownia, James M.; Sato, Takahiro; Sikorski, Marcin; Chollet, Matthieu; Teubner, U.; Robinson, J.; Toleikis, S.; Ziaja, Beata; Tavella, F.

doi:10.1063/1.5046070

Cited by 13 publications

(11 citation statements)

References 27 publications

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“…Additionally, there was an unfortunate hard-to-notice minor bug in the impact ionization subroutine of the code that resulted in cascade durations being erroneously stretched in time by a factor of ~ 1.5-2. It does not affect the qualitative results reported, neither does it invalidate the conclusions-all the drawn conclusions remain unaffected (the proposed scheme for selection of optimal materials tailored for a particular FEL photon energy has recently been confirmed experimentally [1]). However, quantitatively, electronic cascades are shortened after the fix.…”

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confidence: 90%

Correction to: Femtosecond X-ray induced electron kinetics in dielectrics: application for FEL-pulse-duration monitor

Medvedev

2019

Appl. Phys. B

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confidence: 90%

Correction to: Femtosecond X-ray induced electron kinetics in dielectrics: application for FEL-pulse-duration monitor

Medvedev

2019

Appl. Phys. B

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“…Using the Drude model (see, e.g., 24 ), the information on transient optical properties can be obtained from the transient electron density. The maximum value of electron density then translates into an extremum of the transmissivity or reflectivity.…”

Section: Methodsmentioning

confidence: 99%

Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride

Tkachenko

Lipp

Büscher

et al. 2021

Sci Rep

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Spatially encoded measurements of transient optical transmissivity became a standard tool for temporal diagnostics of free-electron-laser (FEL) pulses, as well as for the arrival time measurements in X-ray pump and optical probe experiments. The modern experimental techniques can measure changes in optical coefficients with a temporal resolution better than 10 fs. This, in an ideal case, would imply a similar resolution for the temporal pulse properties and the arrival time jitter between the FEL and optical laser pulses. However, carrier transport within the material and out of its surface, as well as carrier recombination may, in addition, significantly decrease the number of carriers. This would strongly affect the transient optical properties, making the diagnostic measurement inaccurate. Below we analyze in detail the effects of those processes on the optical properties of XUV and soft X-ray irradiated Si$${_3}$$ 3 N$$_4$$ 4 , on sub-picosecond timescales. Si$${_3}$$ 3 N$$_4$$ 4 is a wide-gap insulating material widely used for FEL pulse diagnostics. Theoretical predictions are compared with the published results of two experiments at FERMI and LCLS facilities, and with our own recent measurement. The comparison indicates that three body Auger recombination strongly affects the optical response of Si$${_3}$$ 3 N$$_4$$ 4 after its collisional ionization stops. By deconvolving the contribution of Auger recombination, in future applications one could regain a high temporal resolution for the reconstruction of the FEL pulse properties measured with a Si$${_3}$$ 3 N$$_4$$ 4 -based diagnostics tool.

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“…The XCASCADE code is also efficient for calculations in a regime of excitation below damage threshold, when the atomic rearrangement insignificantly affects the optical properties within the cascade duration. Such an experiment, aiming to study electron cascades in a solid, was conducted at LCLS in 2017 by Katalin Mecseki et al [23]. Samples of Si 3 N 4 , Si and SnO 2 were irradiated with approximately 20 fs FWHM FEL pulse at 5 keV and 9 keV photon energies arriving at 30 • to the target.…”

Section: Models and Experimentsmentioning

confidence: 99%

“…Measured (solid lines) and calculated (dashed lines) single shot and averaged transmission and the derivative of the measured transmission of SnO2 (blue lines) and Si3N4 (green and red lines) at photon energies 5 keV (a) and 9 keV (b). Figure is partly reproduced from Ref [23]…”

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confidence: 99%

Time-resolved ionization measurements with intense ultrashort XUV and X-ray free-electron laser pulses

et al. 2019

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Modern free-electron lasers (FEL) operating in XUV (extreme ultraviolet) or X-ray range allow an access to novel research areas. An example is the ultrafast ionization of a solid by an intense femtosecond FEL pulse in XUV which consequently leads to a change of the complex index of refraction on an ultrashort timescale. The photoionization and subsequent impact ionization resulting in electronic and atomic dynamics are modeled with our hybrid code XTANT(X-ray thermal and non-thermal transitions) and a Monte Carlo code XCASCADE(X-ray-induced electron cascades). The simulations predict the temporal kinetics of FEL-induced electron cascades and thus yield temporally and spatially resolved information on the induced changes of the optical properties. In a series of experiments at FERMI and LCLS, single shot measurements with spatio-temporal encoding of the ionization process have been performed by a correlation of the FEL pump pulse with an optical femtosecond probe pulse. An excellent agreement between the experiment and the simulation has been found. We also show that such kind of experiments forms the basis for pulse duration and arrival time jitter monitoring as currently under development for XUV-FELs.

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Hard X-ray induced fast secondary electron cascading processes in solids

Cited by 13 publications

References 27 publications

Correction to: Femtosecond X-ray induced electron kinetics in dielectrics: application for FEL-pulse-duration monitor

Correction to: Femtosecond X-ray induced electron kinetics in dielectrics: application for FEL-pulse-duration monitor

Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride

Time-resolved ionization measurements with intense ultrashort XUV and X-ray free-electron laser pulses

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