2016
DOI: 10.1016/j.nucengdes.2015.10.029
|View full text |Cite
|
Sign up to set email alerts
|

Hard X-ray photoelectron spectroscopy study for transport behavior of CsI in heating test simulating a BWR severe accident condition: Chemical effects of boron vapors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
2
1
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 20 publications
0
3
0
Order By: Relevance
“…The various photoelectron peaks such as Fe 1s, Fe 2p, O 1s, Pt 4f and Y 3d were measured at room temperature. The other details have been noted elsewhere [16,17]. Figure 1 shows the wide-scan HAXPES spectra of the Pt/YIG samples.…”
Section: Methodsmentioning
confidence: 82%
See 1 more Smart Citation
“…The various photoelectron peaks such as Fe 1s, Fe 2p, O 1s, Pt 4f and Y 3d were measured at room temperature. The other details have been noted elsewhere [16,17]. Figure 1 shows the wide-scan HAXPES spectra of the Pt/YIG samples.…”
Section: Methodsmentioning
confidence: 82%
“…In comparison to the conventional PES, HAXPES offers large probing depths of photoelectrons up to several nanometers with the aid of X-ray energies typically above 5 keV. Owing to this advantage, this method has been known as a powerful tool for non-destructive measurements of true bulk states and buried interfaces [13][14][15][16][17]. Therefore, HAXPES is plausibly well suitable to the purpose of this study.…”
Section: Introductionmentioning
confidence: 99%
“…Applications of HAXPES are diverse, ranging from the identication of buried oxygen in Cu catalysts for CO 2 reduction 115 to characterising the likely outcomes of nuclear accidents. 116 In particular, HAXPES has proved strikingly powerful in locating and characterising layers and buried interfaces, 117 for example in devices (such as prototype metal-oxide-semiconductor eld effect transistor devices, https://doi.org/10.1039/D1FD00110H 118 and spintronic materials 119 ) and interphases, for example the solid electrolyte interphase in battery materials. [120][121][122] In both cases, there are signicant advantages in making measurements in a more realistic environment in a working device or cell, moving towards in operando conditions.…”
Section: Developments In Haxpesmentioning
confidence: 99%