Hardware and Software Solutions for Active Frequency Scalable (Sub)mm-Wave Load–Pull

Millimeter-Wave On-Wafer Large Signal Characterization System for Harmonic Source/Load Pull and Waveform Measurements

“…In the literature, fundamental load-pull has been demonstrated at > 135 GHz. These systems use up/down conversion techniques to extend the frequency range of conventional NVNA-based measurement systems of 67 GHz [8] [9]. Harmonic load-pull systems have been reported at mm-wave, these use load diplexers to perform active injection to harmonically tune load impedance.…”

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz

“…The characterization of DHBT variants under largesignal excitation (generally, via load-pull measurements) is then essential to accurately model transistor behavior in high-frequency PA circuit design. However, the literature provides relatively few reports of load-pull characterization at frequencies of 94 GHz and higher [5], [6], [7], [8]. While circuits are also desired at frequencies much above W-band, 94 GHz load-pull measurements provide an excellent opportunity to validate device models for PA design.…”

Employing M1 direct calibration/de-embedding approaches for large signal model validation at mm-wave frequencies

“…The proposed direct calibration/de-embedding technique (e.g., M1 direct calibration/de-embedding) has been employed to extract the intrinsic device parameters for model validation up to 220GHz [5]. In this contribution, we employ the above mentioned technique in conjunction with large signal device characterization, i.e., mm-wave constant wave (CW) load-pull [6] to extract the intrinsic device large signal metrics and compare them with foundry device models. In this work, the intrinsic device data is obtained employing 1 st tier on wafer calibration, in close proximity to the DUT, employing a fixture design as presented in [4], shown in a simplified 3D drawing in Fig.…”