Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

Doria, Rodrigo T.; Simoen, Eddy; Claeys, Corneel; Martino, João Antônio; Pavanello, Marcelo Antonio

doi:10.1016/j.sse.2011.01.045

Cited by 4 publications

(4 citation statements)

References 38 publications

(51 reference statements)

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“…In this region of the curves, HD3 is given by both series resistance and mobility degradation [25]. In inversion mode devices, the effect of the mobility degradation seems to dominate HD3 [19,25]. However, as previously mentioned, the mobility degradation factor presented by JNTs is extremely smaller than the one shown by IM transistors and mobility degradation only becomes non-negligible above flatband voltage.…”

Section: B Third Order Distortionmentioning

confidence: 74%

“…Additionally, the effect of L sd reduction becomes more pronounced as N D is decreased, indicating an increment of R SD , which can be correlated mainly to the reduction on the density of carriers. As shown in different papers [19,20], the harmonic distortion can be strongly affected by both R SD and mobility degradation.…”

Section: Devices Characteristics and Simulationsmentioning

confidence: 91%

“…The mobility has been assumed to be constant with V GS and set to 85, 100 and 125 cm 2 /V.s. for doping concentrations of 2x10 19 , 1x10 19 and 5x10 18 cm -3 , respectively, according to the values estimated in [14]. In JNTs, the mobility degradation is observed only above flatband and is overlaid by the effect of the series resistance [15].…”

Section: Devices Characteristics and Simulationsmentioning

confidence: 92%

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The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

Doria¹,

Trevisoli²,

Souza³

et al. 2020

JICS

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The linearity of Junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature, the doping concentration and the geometry on the overall linearity have been evaluated. The increase of the series resistance associated both to the variation of the physical parameters and the incomplete ionization effect has shown to improve the second order distortion and degrade the third order one.

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Section: B Third Order Distortionmentioning

confidence: 74%

Section: Devices Characteristics and Simulationsmentioning

confidence: 91%

Section: Devices Characteristics and Simulationsmentioning

confidence: 92%

See 1 more Smart Citation

The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

Doria¹,

Trevisoli²,

Souza³

et al. 2020

JICS

Self Cite

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show abstract

“…The obtained HD3 is lower than those reported in ref. (15) for IM Triple gate devices (around -80 dB for W fin =30nm at V GT =1V, signal amplitude of 50mV and 300K).…”

Section: Harmonic Distortionmentioning

confidence: 99%

Performance of Junctionless Nanowire MOSFET as a Quasi-Linear Resistor

et al. 2013

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In this work an analysis of junctionless nanowire nMOS transistors for the implementation of quasi-linear resistor is presented. The study is based on experimental results of fabricated devices operating in a large range of temperatures, between 300 K and 573 K. The parasitic series resistance plays an important role in the harmonic distortion characteristics, reducing the nonlinearity of JNTs acting as quasi-linear resistor.

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Non-linear behavior of Junctionless nanowire transistors operating in the linear regime

Doria

Trevisoli

Souza

et al. 2013

28th Symposium on Microelectronics Technology and Devices (SBMicro 2013)

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Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

Cited by 4 publications

References 38 publications

The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

Performance of Junctionless Nanowire MOSFET as a Quasi-Linear Resistor

Non-linear behavior of Junctionless nanowire transistors operating in the linear regime

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