Harnessing nonlinearities near material absorption resonances for reducing losses in plasmonic modulators

Haffner, Christian; Heni, Wolfgang; Elder, Delwin L.; Fedoryshyn, Yuriy; Đorđević, Nikola; Chelladurai, Daniel; Koch, Ueli; Portner, Kevin; Burla, Maurizio; Robinson, Bruce H.; Dalton, Larry R.; Leuthold, Juerg

doi:10.1364/ome.7.002168

Cited by 56 publications

(38 citation statements)

References 52 publications

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“…Besides the plasmonic material, the OEO material provides an additional path for further improvement. Recent, experiments have shown that electro-optic (EO) coefficients over 300 pm/V are achievable by operating in close vicinity of the OEO material resonance (λ ≈ 1250 nm)33. Additionally, other OEO materials such as JRD134 show EO-coefficients >300 pm/V JRD135,36.…”

Section: Methodsmentioning

confidence: 99%

Low-loss plasmon-assisted electro-optic modulator

Haffner

Chelladurai

Fedoryshyn

et al. 2018

Nature

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365

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For nearly two decades, the field of plasmonics1 - which studies the coupling of electromagnetic waves to the motion of free electrons in a metal2 - has sought to realize subwavelength optical devices for information technology3–6, sensing7,8, nonlinear optics9,10, optical nanotweezers11 and biomedical applications12. Although the heat generated by ohmic losses is desired for some applications (e.g. photo-thermal therapy), plasmonic devices for sensing and information technology have largely suffered from these losses inherent to metals13. This has led to a widespread stereotype that plasmonics is simply too lossy to be practical. Here, we demonstrate that these losses can be bypassed by employing “resonant switching”. In the proposed approach, light is only coupled to the lossy surface plasmon polaritons in the device’s off-state (in resonance) where attenuation is desired to ensure large extinction ratios and facilitate sub-ps switching. In the on state (out of resonance), light is prevented from coupling to the lossy plasmonic section by destructive interference. To validate the approach, we fabricated a plasmonic electro-optic ring modulator. The experiments confirm that low on-chip optical losses (2.5 dB), high-speed operation (>>100 GHz), good energy efficiency (12 fJ/bit), low thermal drift (4‰ K-1), and a compact footprint (sub-λ radius of 1 μm) can be realized within a single device. Our result illustrates the potential of plasmonics to render fast and compact on-chip sensing and communications technologies.

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Section: Methodsmentioning

confidence: 99%

Low-loss plasmon-assisted electro-optic modulator

Haffner

Chelladurai

Fedoryshyn

et al. 2018

Nature

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365

217

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“…1 shows an SEM image of the proposed plasmonic ring resonator coupled to a silicon bus waveguide. The resonator consists of a circular plasmonic slot waveguide, which is filled with an organic electro-optic material [9]. Light traveling in the bus waveguide partially couples ( ) to surface plasmon polaritons (SPPs) propagating in the resonator and is partially transmitted ( ) with an overall coupling efficiency of = 2 + 2 < 1, which is limited by Ohmic loss [10].…”

Section: Introductionmentioning

confidence: 99%

Bypassing Loss in Plasmonic Modulators

Haffner

Chelladurai

Fedoryshyn

et al. 2018

Conference on Lasers and Electro-Optics

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“…The materials can be easily spin-coated, micro-dispensed or printed in high-throughput processes. For devices based on OEO materials, the largest in-device EO figure of merit reported so far amounts to n 3 r33 = 1220 pm/V (n 3 r33 = 2040 pm/V), at a wavelength of  = 1.55 µm ( = 1.25 µm), achieved for an organic binarychromophore compound in a POH modulator [27].…”

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confidence: 99%

Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

Kieninger¹,

Kutuvantavida²,

Elder³

et al. 2018

Optica

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Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n 3 r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest materialrelated in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vµm -the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonicelectronic signal processing.

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Harnessing nonlinearities near material absorption resonances for reducing losses in plasmonic modulators

Cited by 56 publications

References 52 publications

Low-loss plasmon-assisted electro-optic modulator

Low-loss plasmon-assisted electro-optic modulator

Bypassing Loss in Plasmonic Modulators

Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

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