HAXPES for Materials Science at the GALAXIES Beamline

Rueff, Jean‐Pascal; Rault, Julien; Ablett, J. M.; Utsumi, Yuki; Céolin, Denis

doi:10.1080/08940886.2018.1483648

Cited by 19 publications

(16 citation statements)

References 23 publications

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“…The SW-HAXPES measurements were performed at the beamline GALAXIES of SOLEIL. The details of this beamline can be found elsewhere [35,36]. The measurement was carried out at an excitation energy of 3000 eV and at room temperature.…”

Section: Resultsmentioning

confidence: 99%

Orbital contributions in the element-resolved valence electronic structure of Bi2Se3

et al. 2021

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Section: Resultsmentioning

confidence: 99%

Orbital contributions in the element-resolved valence electronic structure of Bi2Se3

et al. 2021

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“…These have included the emergence of hard X-ray photoelectron spectroscopy (HAXPES). A variety of new HAXPES beamlines [113,114,115,116] have been constructed as new light sources are brought online, enabling XPS studies that are not limited by the surface sensitivity of lab sources. Performing XPS studies with X-ray photon energies >2 keV provides more bulk sensitivity and enables access to transition metal 1s core levels that cannot be examined in a conventional Al K α laboratory source.…”

Section: Future Directions For In Situ and Related Studiesmentioning

confidence: 99%

Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

Thapa

Paudel

Blanchet

et al. 2021

Journal of Materials Research

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Emergent behavior at oxide interfaces has driven research in complex oxide films for the past 20 years. Interfaces have been engineered for applications in spintronics, topological quantum computing, and high-speed electronics with properties not observed in bulk materials. Advances in synthesis have made the growth of these interfaces possible, while X-ray photoelectron spectroscopy (XPS) studies have often explained the observed interfacial phenomena. This review discusses leading recent research, focusing on key results and the XPS studies that enabled them. We describe how the in situ integration of synthesis and spectroscopy improves the growth process and accelerates scientific discovery. Specific techniques include determination of interfacial intermixing, valence band alignment, and interfacial charge transfer. A recurring theme is the role that atmospheric exposure plays on material properties, which we highlight in several material systems. We demonstrate how synchrotron studies have answered questions that are impossible in lab-based systems and how to improve such experiments in the future.

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“…To maximize the overall photoelectron yield in HAXPES, quasi-normal emission detection is typically coupled with X-ray grazing incidence (α ≤ 5 • ) [44][45][46][47]. This has the advantage of minimizing the secondary (inelastic) electron background [46]; 5.…”

Section: Optimization Of the Ap-haxpes Experimental Conditionsmentioning

confidence: 99%

Interface Science Using Ambient Pressure Hard X-ray Photoelectron Spectroscopy

et al. 2019

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The development of novel in situ/operando spectroscopic tools has provided the opportunity for a molecular level understanding of solid/liquid interfaces. Ambient pressure photoelectron spectroscopy using hard X-rays is an excellent interface characterization tool, due to its ability to interrogate simultaneously the chemical composition and built-in electrical potentials, in situ. In this work, we briefly describe the "dip and pull" method, which is currently used as a way to investigate in situ solid/liquid interfaces. By simulating photoelectron intensities from a functionalized TiO 2 surface buried by a nanometric-thin layer of water, we obtain the optimal photon energy range that provides the greatest sensitivity to the interface. We also study the evolution of the functionalized TiO 2 surface chemical composition and correlated band-bending with a change in the electrolyte pH from 7 to 14. Our results provide general information about the optimal experimental conditions for characterizing the solid/liquid interface using the "dip and pull" method, and the unique possibilities offered by this technique.Surfaces 2019, 2 79 perturbation of the junction itself. Therefore, several spectroscopic methods based on photon in/photon out or photon in/electron out approaches have been applied to investigate solid/liquid interfaces. Among them, synchrotron-based techniques such as surface X-ray diffraction, X-ray absorption/emission and photoelectron spectroscopy, and "laboratory-based" techniques, such as infrared, Raman and non-linear optical spectroscopies have been recently developed [10].In this context, X-ray photoelectron spectroscopy (XPS) stands as an excellent characterization tool, since it offers elemental and chemical sensitivity, simultaneously measuring local built-in electrical potentials via the detection of rigid photoelectron kinetic energy shifts in both core and valence levels [11][12][13][14][15][16][17]. Due to the high vapor pressure of many liquids of interest, differential pumping schemes have to be used in photoelectron analyzers to minimize the elastic and inelastic scattering of electrons in the gas phase above the liquid side of the junction [18][19][20]. In addition, small sample-to-analyzer aperture working distances (WDs) must be used, for the same purpose [18][19][20]. A reasonable trade-off needs to be found between limiting the electron scattering by the gas phase molecules and keeping the pressure at the sample surface above 90-95% of the nominal pressure in the chamber. Usual WDs (at which the analyzer focus is optimized) are about the diameter of the aperture itself [18][19][20]. Modern state-of-the-art electron analyzers are capable to operate at pressures of and above 30 mbar (the vapor tension of water at room temperature) and at high photoelectron kinetic energies (KEs, up to 12 keV) [11]. The extension of AP-XPS to high photon energies (i.e., high photoelectron KEs) has two main advantages: the reduced photoelectrons/gas molecules scattering provides higher signal intensity at...

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HAXPES for Materials Science at the GALAXIES Beamline

Cited by 19 publications

References 23 publications

Orbital contributions in the element-resolved valence electronic structure of Bi2Se3

Orbital contributions in the element-resolved valence electronic structure of Bi2Se3

Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

Interface Science Using Ambient Pressure Hard X-ray Photoelectron Spectroscopy

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