HBT active antenna as a self-oscillating Doppler sensor

Kelly, M.J.; Fusco, Vincent; Stewart, J.A.C.; Sancheti, S.; Drew, S.

doi:10.1049/ip-map:20000050

Cited by 2 publications

(1 citation statement)

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“…Two-terminal devices, like IM-PATT diodes, have been used for some time in active antennas [3] and heterojunction bipolar transistors (HBT's) as three-terminal devices were recently reported [4]. This paper investigates for the first time the use of high electron-mobility transistors (HEMT's) in active K-band antennas.…”

Section: Introductionmentioning

confidence: 99%

Design of radiating K-band HEMT oscillators by means of moment-method approach

Kaleja¹,

Biebl²

1998

IEEE Trans. Microwave Theory Techn.

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This paper discusses the design of radiating K-band oscillators with high electron-mobility transistors (HEMT's) as active devices. In order to allow monolithic integration, the design is based on a uniplanar microstrip configuration, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. In this configuration, feeding of the microstrip lines is incompatible to the fundamental quasi-TEM microstrip mode. Moreover, the radiation losses of these so-called active antennas significantly influence the oscillation condition. Thus, modeling of the passive circuit by means of a full-wave analysis is mandatory. In this paper, we show how a full-wave analysis of the passive circuit can be combined with well-known network-based oscillator design methods using commercially available design tools. By using a moment-method approach for the passive structure and smallsignal model for the active device, all relevant electromagnetic effects, like losses, coupling and radiation, are included, allowing a very precise prediction of the operation frequency.

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Section: Introductionmentioning

confidence: 99%