HCI and NBTI including the effect of back-biasing in thin-BOX FD-SOI CMOSFETs

Abstract

Hot carrier injection (HCI) and negative bias temperature instability (NBTI) of fully depleted silicon-oninsulator (FD-SOI) CMOSFETs with thin-buried oxide (BOX) were investigated for the first time. A comparison with conventional bulk devices showed that no halo implant in this structure produces better reliability. The impact of back-biasing in thin-BOX FD-SOI devices on reliability is also reported.