Heat capacity of the n-InSe single crystal layered semiconductor

Abstract

Measurements of heat capacity and conductivity of InSe single crystal have been carried out over the temperature range 5–300 K. Heat capacity Cp, entropy ΔS, and enthalpy ΔH as well as Debye temperatures have been calculated. The singularities observed on the temperature dependencies of heat capacity and electric conductivity can be attributed to a phase transition to the charge density wave state. This transition perturbs considerably the electron and phonon spectra of the studied layered crystal.

Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy

“…However, the investigation of phonon transport and thermal properties of 2D InSe is still in its infancy. [ 24–33 ] Although theoretical studies have provided an insight into the thermal conductivity (κ) of 2D InSe, the experimental investigation of heat transport at the nanoscale is rarer, as it requires advanced microscopy imaging techniques. Furthermore, real device structures involve heat transfer across interfaces and lateral boundaries that are generally ignored by theory.…”

Electrical and thermal transport properties of S- and Te-doped InSe alloys

“…The λ was measured using a laser-flash method from 300 to 735 K, perpend icular to the pressing direction, as temperature increased from 300 to 735 K. The theoretical density of each sample with nominal composition was used to calculate κ. Further, the value of C p of InSe was considered 0.255 J (g • K) −1 for all the samples [12,13]. The absorbance spectra of the samples were measured using an ultraviolet-visible (UV-VIS) spectrophotometer with a range of 200-800 nm to determine the optical E g .…”