Heat flow rectification in inhomogeneous GaAs

Marucha, Cz.; Mucha, J.; Rafałowicz, J.

doi:10.1002/pssa.2210310130

Cited by 32 publications

(16 citation statements)

References 9 publications

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“…A certain amount of thermal rectification can be achieved between two bulk materials with strongly different thermal conductivity dependence on temperature [142]. This is in fact a classical Fourier law effect, first observed in the 1970s [143,144] and recently reexamined by Dames [142] and Kobayashi et al [145]. As shown in Fig.…”

Section: Thermal Rectificationmentioning

confidence: 84%

Energy dissipation and transport in nanoscale devices

2010

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Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the intersection of electron, lattice (phonon), and optical (photon) interactions. This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures. First, the landscape of power usage from nanoscale transistors (~10 -8 W) to massive data centers (~10 9 W) is surveyed. Then, focus is given to energy dissipation in nanoscale circuits, silicon transistors, carbon nanostructures, and semiconductor nanowires. Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times. Finally, recent directions regarding energy transport are reviewed, including electrical and thermal conductivity of nanostructures, thermal rectification, and the role of ubiquitous material interfaces.

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Section: Thermal Rectificationmentioning

confidence: 84%

Energy dissipation and transport in nanoscale devices

2010

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“…material A has low thermal conductivity at low temperature and high thermal conductivity at high temperature while material B is the opposite). This mechanism was initially proposed by Marucha et al when they performed experiments on inhomogeneous GaAs and found a directional dependence of the thermal conductivity [28]. Marucha et al later analyzed the system using the one-dimensional Fourier equation and found that this temperature dependence of the thermal conductivity would result in thermal rectification [29].…”

Section: Temperature Dependence Of Thermal Conductivity At Interfacesmentioning

confidence: 89%

A review of thermal rectification observations and models in solid materials

Roberts

Walker

2011

International Journal of Thermal Sciences

325

283

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Thermal rectification is a phenomenon in which thermal transport along a specific axis is dependent upon the sign of the temperature gradient or heat current. This phenomenon offers improved thermal management of electronics as size scales continue to decrease and new technologies emerge by having directions of preferred thermal transport. For most applications where thermally rectifying materials could be of use they would need to exhibit one direction with high thermal conductivity to allow for efficient transport of heat from heat generating components to a sink and one direction with low conductivity to insulate the temperature and heat flux sensitive components. In the process of understanding and developing these materials multiple mechanisms have been found which produce thermally rectifying behavior and much work has been and is being done to improve our understanding of the mechanisms and how these mechanisms can be used with our improved ability to fabricate at the nanoscale to produce efficient materials which have high levels of thermal rectification.

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“…[ 1 ] Thermal diodes are desirable for the smart thermal management of electronics packaging [ 2–4 ] or spacecraft, [ 5,6 ] as they can effectively dump onboard heat while also shielding from external heat sources. The effectiveness of a thermal diode is quantified by its diodicity (also known as the rectification coefficient), which compares the effective thermal conductivity in the forward mode ( k f ) to that in the reverse mode ( k r ) [ 7 ] :

\begin{matrix} η = \frac{k_{f} - k_{r}}{k_{r}} \end{matrix}

…”

Section: Introductionmentioning

confidence: 99%

Bridging‐Droplet Thermal Diodes

Edalatpour

Murphy

Mukherjee

et al. 2020

Adv Funct Materials

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Phase-change thermal diodes effectively transport heat unidirectionally, but are currently constrained by either a gravitational dependence, a 1D configuration, or poor durability. Here, a novel bridging-droplet thermal diode which uniquely bypasses all of these existing constraints is developed. The diode is comprised of two opposing copper plates separated by an insulating gasket of micrometric thickness; one plate contains a superhydrophilic wick structure while the other is smooth and hydrophobic. In the forward mode of operation, water evaporates from the heated wicked plate and condenses on the hydrophobic plate. The large contact angle of the dropwise condensate enables bridging across the gap to replenish the wicked evaporator, providing sustained phase-change heat transfer. Conversely, in the reverse mode, the heat source is now on the hydrophobic plate, resulting in dryout and excellent thermal insulation across the gap. An orientation-independent heat transfer ratio (i.e., diodicity) as high as 85 was measured.

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Heat flow rectification in inhomogeneous GaAs

Cited by 32 publications

References 9 publications

Energy dissipation and transport in nanoscale devices

Energy dissipation and transport in nanoscale devices

A review of thermal rectification observations and models in solid materials

Bridging‐Droplet Thermal Diodes

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