Heat Treatment Behaviour of Cr Implanted in GaAs SI Material

Simondet, F.; Venger, C.; Martin, G. M.; Chaumont, J.

doi:10.1007/978-1-4684-9193-7_10

Cited by 3 publications

(2 citation statements)

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“…This result is quite different from that (see Fig. 5) reported by Simondet et al (15). Their sample was annealed at 772~ for 15 rain, after an implantation of 3 X 1014 Cr cm -2 at 190 keV.…”

Section: Redistribution Resulting From Cr Ion Implantationcontrasting

confidence: 76%

“…5a, most of the implanted Cr on interstitial sites outdiffused, and Mn accumulation took place to the same degr~ee as in the un~mplanted samples, indicating that the Cr on Ga site was also depleted. In this case, the accumulation of Cr at the surface and the bumP located around Rp Jr-ARp reported by Simondet et al (15) were not observed. In Fig.…”

Section: Redistribution Resulting From Cr Ion Implantationmentioning

confidence: 47%

See 1 more Smart Citation

Chromium and Manganese Redistribution in Semi‐insulating GaAs

Oshima

Watanabe

Miyazawa

1984

J. Electrochem. Soc.

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Cr and Mn redistribution in various semi‐insulating normalGaAs substrates annealed with or without encapsulation have been investigated quantitatively using secondary ion mass spectrometry (SIMS) and photoluminescence (PL). Mn was incorporated into Cr‐depleted sites (Ga vacancies). Cr out‐diffusion can be explained by simple diffusion theory having critical Cr depletion concentration under which no Cr depletion and Mn accumulation occur. While stress‐enhanced diffusion takes place without Mn incorporation in capped annealing, a large Cr out‐diffused area appears in the case of capless (face‐to‐face) annealing of high‐dose implanted normalGaAs . This may be attributed to defects and surface dissociation.

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Section: Redistribution Resulting From Cr Ion Implantationcontrasting

confidence: 76%

Section: Redistribution Resulting From Cr Ion Implantationmentioning

confidence: 47%