Heater-tuned DBR laser diode for high thermal efficiency

Park, Su Ik; Jin, Jae hyun; Lee, Chul Wook; Kim, Ki Soo; Kwon, Oh‐Kyong; Park, Kyoung Su; Shim, Jong In

doi:10.23919/islc52947.2022.9943370

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…For the device, an active region within the gain section was designed for lasing near a wavelength of 1.29 µm. In addition, the epitaxial layer and waveguide in the EAM section were optimized for operation at a rate of 100-Gb/s PAM-4, and a heat-insulated structure in the tuning sections (i.e., DBR and PC) was applied to enhance the wavelength tuning efficiency [19]. First, to allow the LD to operate within a CWDM window of 1.29 µm, the Bragg wavelength and coupling coefficient of the grating were designed to be approximately 1.283 µm and 25 cm -1 , respectively.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

100-Gb/s/λ PAM-4 EAM-Integrated DBR-LD Supporting Multiple Sub-Channels Within 1.29 μm Window

Kwon

Lee

Park

et al. 2023

J. Lightwave Technol.

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We present a distributed Bragg reflector-laser diode (DBR-LD) monolithically integrated with an electroabsorption modulator (EAM) offering a 100-Gb/s pulse amplitude modulation 4-level (PAM-4) signal per sub-channel under a CWDM window of 1.29 µm. For the integrated structure, the DBR-LD and EAM were implemented using a trenched waveguide in the tuning sections for achieving energy-efficient wavelength-tuning and a deep ridge waveguide with an optimized structure for a 100-Gb/s PAM-4 operation, respectively. The fabricated chip shows a threshold current of approximately 12 mA and a tuning range of greater than 13 nm, which corresponds to a wavelength band capable of supporting 16 channels with a 150-GHz grid, while maintaining a side mode suppression ratio of greater than 40 dB. In dynamic tests, the results show clear 100-Gb/s PAM-4 eye openings with an outer extinction ratio of more than 4 dB and a transmitter dispersion eye closure quaternary of less than 1.5 dB for all measured channels.

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Section: Device Structure and Fabricationmentioning

confidence: 99%

100-Gb/s/λ PAM-4 EAM-Integrated DBR-LD Supporting Multiple Sub-Channels Within 1.29 μm Window

Kwon

Lee

Park

et al. 2023

J. Lightwave Technol.

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“…There are three main ways to change the effective refractive index of tunable semiconductor laser diodes: free-carrier plasma dispersion effect (FCPD) [17], quantum-confined Stark effect (QCSE) [18], and thermo-optic effect [19]. The typical DBR laser diodes developed from the above effect can include the passive phase section and the passive grating section represented by the multi-section DBR laser diodes [3], the fast tunable QCSE laser diodes with reverse biased electric field [18], and the thermally tunable semiconductor laser diodes [12,20]. Considering the operation principle of semiconductor laser diode, the effective refractive index is usually related to the injected carrier density.…”

Section: B Tuning Mechanismmentioning

confidence: 99%

Monolithically Integrated Tunable Three- Section All-Active DBR Laser Diodes With 30 nm Tuning Range

et al. 2023

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We present a monolithically integrated three-section all-active AlGaInAs/InP tunable distributed Bragg reflector (DBR) ridge waveguide laser diode that uses thermal tuning mechanism and mode-hopping tuning principle to achieve wide-range wavelength tuning. It is similar to the traditional three-section DBR laser structure, including a gain section, a phase section, and a DBR grating section. The difference is that the phase section and the DBR section incorporate the same active quantum well structure as the gain section. In this case, weak effective refractive index changes of the three active sections affected by the current injection will occur since the carrier density is clamped by the threshold gain condition of the DBR laser diode. Despite this limitation, a noncontinuous tuning up to ~30 nm (1564-1594 nm) can be observed using only current injection at a constant temperature of 25 °C. Significant thermal effects occurred during the tuning process. In addition, a discontinuity is introduced in the tuning because it does not contain a passive region for phase adjustment. However, the device still provides a stable single longitudinal mode output with nine channels, a wavelength spacing of about 4 nm, and a side mode suppression ratio (SMSR) of more than 30 dB. Furthermore, the DBR laser diode can be easily fabricated utilizing the conventional distributed feedback laser diode fabrication process without secondary epitaxy and heater metal. The all-active DBR laser diode will be expected to be applied in the coarse wavelength division multiplexing (CWDM) systems with the advantage of low cost.

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Heater-tuned DBR laser diode for high thermal efficiency

Cited by 2 publications

References 2 publications

100-Gb/s/λ PAM-4 EAM-Integrated DBR-LD Supporting Multiple Sub-Channels Within 1.29 μm Window

100-Gb/s/λ PAM-4 EAM-Integrated DBR-LD Supporting Multiple Sub-Channels Within 1.29 μm Window

Monolithically Integrated Tunable Three- Section All-Active DBR Laser Diodes With 30 nm Tuning Range

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